Optoelectronic devices with organometal perovskites with mixed anions

ABSTRACT

The invention provides an optoelectronic device comprising a mixed-anion perovskite, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention further provides a mixed-halide perovskite of the formula (I) [A][B][X] 3  wherein: [A] is at least one organic cation; [B] is at least one divalent metal cation; and [X] is said two or more different halide anions. In another aspect, the invention provides the use of a mixed-anion perovskite as a sensitizer in an optoelectronic device, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention also provides a photosensitizing material for an optoelectronic device comprising a mixed-anion perovskite wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions.

FIELD OF THE INVENTION

The present invention relates to optoelectronic devices, including photovoltaic devices such as solar cells, and light-emitting devices.

BACKGROUND TO THE INVENTION

The present increases in the global population coupled with the advance of developing countries towards more industrialised economies is creating increasing demand for secure, sustainable energy supplies. There is therefore a pressing need to create new optoelectronic devices that will state global demand for low-carbon emission.

Solar energy is seen as a clean solution providing high efficiency. However, the high cost of manufacturing devices that harness solar energy, including high material costs, has historically hindered its use.

The production of low-cost optoelectronic devices, such as photovoltaics, that consist of abundant materials, can be manufactured rapidly using reel-to-reel manufacturing methods and simple wet chemistry processes is therefore a burgeoning field of research. In recent years, the power conversion efficiencies of optoelectronic devices have been steadily increasing. However, using traditional photovoltaics it appears unlikely that further significant increases in power conversion efficiencies can be realised. There is, therefore, a real need for new solar cells technologies with a focus on low cost.

Dye-sensitised solar cells are composed of dye-sensitized mesoporous TiO₂ infiltrated with a redox active electrolyte [O'Regan et al., Nature, 353, 737-740, 1991]. They are a real contender to be able to generate power on the largest scale. However, despite the most efficient devices being verified at 11.4% and with recent reports of up to 12.3% [Yella et al., Science, 334 (6056), 629-634, 2011] widespread commercialization is yet to be achieved. One of the overriding reasons for the lack of commercial uptake is the liquid nature of the redox couple used in the electrolyte cell, it is highly volatile and corrosive resulting in major limitations on both processing and long term stability, especially at elevated temperatures. A good contender to be able to also generate such efficiencies and be more compatible with large scale processing and long term stability is the solid-state dye-sensitized solar cell, where the redox active electrolyte is substituted with a solid-state hole-conductor. [Snaith et al., Advanced Materials, 19, 3187-3200, 2007] However, at present the most efficient solid-state DSCs are only just over 7%. [Burschka et al., J. Am. Chem. Soc., 133 (45), 18042-18045, 2011] The main reason for this lower performance is that the maximum thickness of the solid-state DSC is limited to around 2 μm due to a combination of faster charge recombination and limited ability to infiltrate thick mesoporous photoanodes [Snaith et al., Advanced Materials, 19, 3187-3200, 2007]. At 2 μm thickness, the sensitizers do not absorb enough light over a broad enough spectrum to generate sufficient photocurrent, and short-circuit photocurrents are generally limited to around 10 mAcm⁻² as opposed to over 20 mAcm⁻² for the best electrolyte cells.

Recently there has been renewed interest in “extremely thin absorber” (ETA) solar cells, which are equivalent to a solid-state DSC, however the dye is replaced with an extremely thin layer of an inorganic semiconductor coated at the interface between the mesoporous TiO₂ and the hole-conductor. Using antimony sulphide Sb₂S₃ as the absorber, efficiencies of close to 6% have been reported (Chang et al., Nano Lett., 12 (4), 1863-1867, 2012), but for this material, although high photocurrents can be generated the open-circuit voltages are low limiting the overall performance.

As an alternative absorber material, organometal halide perovskites could be a good candidate and have extremely high extinction coefficients in thin films. They can be easily processed from precursor solutions and have a proven excellence in other applications, such as excellent candidates as transistors [Kagan et al., Science, 286, 945, 1999] and light-emitting diodes (Era et al., Appl. Phys. Lett., 65, 676, 1994). Recently, they have also been reported as sensitizers in liquid electrolyte based photo-electrochemical cells, and delivered solar power conversion efficiencies of between 3.5 to 6.5%. (Kojima et al, J. Am. Chem. Soc., 131, 6050, 2009; Im et al, Nanoscale, 3, 4088, 2011.) However, in this previously reported electrolyte system, the perovskite absorbers decayed rapidly, and the solar cells dropped in performance after only ten minutes.

SUMMARY OF THE INVENTION

The present inventors have found that optoelectronic devices comprising a mixed-anion perovskite are surprisingly stable and exhibit unexpectedly high power conversion efficiencies and photocurrents. The optoelectronic devices are also relatively inexpensive to make and could be produced on a large scale with relative ease.

An important requirement for any optoelectronic device is stability over the intended lifetime of that device. The inventors have found that devices according to the present invention are far less susceptible to vapour-induced chromism than devices comprising a single-halide perovskite.

An additional advantage of devices of the present invention is the comparatively high power conversion efficiencies and photocurrents they deliver. Photo-conversion efficiencies at 1 sun (AM 1.5G 100 mWcm⁻²) of 11.5% have been observed. These efficiencies surpass the efficiencies displayed by devices comprising a single-halide perovskite. Further, the performance of the devices of the invention is unprecedented for solid-state sensitized solar cells and competes directly with the very best performing electrolyte cells. Photocurrents of 21 mAcm⁻² have observed for optoelectronic devices on the invention. This exceeds the photocurrents observed for the most efficient solid-state DSCs currently available.

Further, the mixed-anion perovskite provides a very flexible framework which may be manipulated by adjusting the individual components in the material, and thus allows exceptional control at the molecular level. The properties of the mixed-anion perovskite may, therefore, be easily tuned to enhance the performance of the optoelectronic device in which they are utilised.

All of these advantages would be overshadowed if the optoelectronic devices were expensive to produce or required complex manufacturing methods that ruled out large scale production. However, this is not the case for the optoelectronic devices of the present invention. The materials used in the devices are both relatively abundant and inexpensive. Further, the devices may be produced via processes that would allow large-scale production methods.

Accordingly, in a first aspect, the invention provides an optoelectronic device comprising a mixed-anion perovskite, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions.

In a second aspect, the invention provides a mixed-halide perovskite of formula (I)

[A][B][X]₃  (I)

wherein:

[A] is at least one organic cation of the formula (R₁R₂R₃R₄N)⁺, wherein:

-   -   (i) R₁ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl,         or unsubstituted or substituted aryl;     -   (ii) R₂ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl,         or unsubstituted or substituted aryl;     -   (iii) R₃ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl,         or unsubstituted or substituted aryl; and     -   (iv) R₄ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl,         or unsubstituted or substituted aryl;

[B] is at least one divalent metal cation; and

[X] is said two or more different halide anions.

Typically, in the second aspect of the invention:

(i) when A is an organic cation which is (CH₃NH₃)⁺ and B is a divalent metal cation which is Sn²⁺, the mixed-halide perovskite does not comprise: (a) a chloride ion and a bromide ion, or (b) a bromide ion and an iodide ion; and

(ii) when A is an organic cation which is (CH₃NH₃)⁺ and B is a divalent metal cation which is Pb²⁺, the mixed-halide perovskite does not comprise a chloride ion and a bromide ion.

In a third aspect, the invention provides a mixed-halide perovskite of the formula (I)

[A][B][X]₃  (I)

wherein:

[A] is at least one organic cation of the formula (R₅R₆N═CH—NR₇R₈)⁺, wherein:

(i) R₅ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl;

(ii) R₆ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl;

(iii) R₇ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; and

(iv) R₈ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl:

[B] is at least one divalent metal cation; and

[X] is two or more different halide anions.

In another aspect, the invention provides the use of a mixed-anion perovskite as a sensitizer in an optoelectronic device, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions.

The invention also provides a photosensitizing material for an optoelectronic device comprising a mixed-anion perovskite wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions.

BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a schematic diagram of a photovoltaic device comprising a mixed-anion perovskite.

FIG. 2(a) is a UV-Vis absorbance spectra of perovskite CH₃NH₃PbBr₃, prepared on TiO₂. On the graph wavelength in nm is plotted on the x-axis and absorbance in arbitrary units is plotted on the y-axis.

FIG. 2(b) is a UV-Vis absorbance spectra of perovskite CH₃NH₃PbI₃, prepared on TiO₂. On the graph wavelength in nm is plotted on the x-axis and the absorbance in arbitrary units is plotted on the y-axis.

FIG. 3 is an isometric cross-section drawing of a generic nanostructured solar cell: (1) metal cathode, (2) hole-conducting material, nanostructured mesoporous metal oxide with absorber and hole-conducting material (see FIG. 4 for clarification), (3) transparent conducting metal oxide (anode), (4) transparent substrate, (5) metal anode, (6) compact metal oxide.

FIG. 4 is a schematic showing cross-section of the ‘active layer’ of a generic nanostructured solar cell: (2(i)) light sensitive absorber, (2(ii)) metal oxide, metal cathode, (6) compact metal oxide, (7) hole-conducting material.

FIG. 5 is a UV-Vis absorbance spectra of organometal mixed-halide layered perovskites: K330 (CH₃NH₃PbCl₂I) and K331 (CH₃NH₃PbCl₂Br), prepared on TiO₂ at 20 vol %. On the graph the wavelength in nm is plotted on the x-axis and the absorbance in arbitrary units is plotted on the y-axis. The dark trace is K330 and the light trace is K331.

FIG. 6 shows the current-voltage characteristics under simulated AM1.5G illumination of 100 mWcm⁻² (top curve) and in the dark (bottom curve) of a device assembled in bilayer structure: F:SnO₂/Compact TiO₂/K330/Spiro OMeTAD/Ag. On the graph the voltage in volts is plotted on the x-axis and the current density in mAcm⁻² is plotted on the y-axis.

FIG. 7 shows the current-voltage characteristics under simulated AM1.5G illumination of a device assembled in absorber-sensitised structure with hole-conductor: F:SnO₂/Compact TiO₂/Mesoporous TiO₂/K330/Spiro OMeTAD/Ag. On the graph the voltage in volts is plotted on the x-axis and the current density in mAcm⁻² is plotted on the y-axis.

FIG. 8 shows the current-voltage characteristics under simulated AM1.5G illumination of a device assembled in absorber-sensitised structure with hole-conductor: F:SnO₂/Compact TiO₂/Mesoporous TiO₂/K330/P3HT/Ag. On the graph the voltage in volts is plotted on the x-axis and the current density in mAcm⁻² is plotted on the y-axis.

FIG. 9 shows the Incident Photon-to-Electron Conversion Efficiency (IPCE) action spectra of a device assembled in mesoporous absorber structure with hole-conductor: F:SnO₂/Compact TiO₂/Mesoporous TiO₂/K330/Spiro OMeTAD/Ag. On the graph the wavelength in nm is plotted on the x-axis and the IPCE in plotted on the y-axis.

FIG. 10 shows the Incident Photon-to-Electron Conversion Efficiency (IPCE) action spectra of a device assembled in absorber-sensitised structure with hole-conductor: F:SnO₂/Compact TiO₂/Mesoporous TiO₂/K330/P3HT (dark trace) or PCPDTBT (light trace)/Ag. On the graph the wavelength in nm is plotted on the x-axis and the IPCE in plotted on the y-axis.

FIG. 11 shows the UV-Vis absorbance spectra for a device assembled in absorber-sensitised structure with hole-conductor: F:SnO₂/Compact TiO₂/mesoporous oxide/K330/Spiro OMeTAD sealed using surlyn and epoxy with light soaking under simulated AM1.5G illumination over time. On the graph wavelength in nm is plotted on the x-axis and the absorbance in arbitrary units is plotted on the y-axis.

FIG. 12 shows the UV-Vis absorbance spectra taken at 500 nm of light soaking under simulated AM1.5G illumination over time for device assembled in absorber-sensitised structure with hole-conductor: F:SnO₂/Compact TiO₂/Mesoporous TiO₂/K330/Spiro OMeTAD sealed using surlyn and epoxy. On the graph time in hours is plotted on the x-axis and the absorbance in arbitrary units is plotted on the y-axis.

FIG. 13 shows the X-Ray Diffraction (XRD) spectra of K330 at 35 vol % on glass. Degrees in 2-theta are plotted on the x-axis and the number of counts in arbitrary units is plotted on the y-axis.

FIG. 14 shows the Scanning Electron Microscope (SEM) image cross-section of mesoporous TiO₂.

FIG. 15 shows the Scanning Electron Microscope (SEM) image cross-section of mesoporous TiO₂/K330.

FIG. 16 shows the Scanning Electron Microscope (SEM) image cross-section of mesoporous TiO₂/K330/Spiro OMeTAD.

FIG. 17(a) shows UV-vis absorption spectra of the range of FOPbI_(3y)Br_(3(1−y)) perovskites and

FIG. 17(b) shows steady-state photoluminescence spectra of the same samples.

FIG. 18(a-c) provides schematic diagrams of: (a) the general perovskite ABX₃ unit cell; (b) the cubic perovskite lattice structure (the unit cell is shown as an overlaid square); and (c) the tetragonal perovskite lattice structure arising from a distortion of the BX₆ octahedra (the unit cell is shown as the larger overlaid square, and the pseudocubic unit cell that it can be described by is shown as the smaller overlaid square).

FIG. 18(d) shows X-ray diffraction data for the FOPbI_(3y)Br_(3(1−y)) perovskites for various values of y ranging from 0 to 1. FIG. 18(e) shows a magnification of the transition between the (100) cubic peak and the (110) tetragonal peak, corresponding to the (100) pseudocubic peak, as the system moves from bromide to iodide. FIG. 18(f) shows a plot of bandgap against calculated pseudocubic lattice parameter.

FIG. 19(a) shows average current-voltage characteristics for a batch of solar cells comprising FOPbI_(3y)Br_(3(1−y)) perovskites sensitizing mesoporous titania, with spiro-OMeTAD as the hole transporter, measured under simulated AM1.5 sunlight. FIG. 19(b) shows a normalised external quantum efficiency for representative cells, and FIG. 19(c) shows a plot of the device parameters of merit for the batch, as a function of the iodine fraction, y, in the FOPbI_(3y)Br_(3(1−y)) perovskite.

DETAILED DESCRIPTION OF THE INVENTION

The invention provides an optoelectronic device comprising a mixed-anion perovskite, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions.

An optoelectronic device is any device that is capable of converting optical energy into electrical energy or converting electrical energy into optical energy.

The term “perovskite”, as used herein, refers to a material with a three-dimensional crystal structure related to that of CaTiO₃ or a material comprising a layer of material, wherein the layer has a structure related to that of CaTiO₃. The structure of CaTiO₃ can be represented by the formula ABX₃, wherein A and B are cations of different sizes and X is an anion. In the unit cell, the A cations are at (0,0,0), the B cations are at (½, ½, ½) and the X anions are at (½, ½, 0). The A cation is usually larger than the B cation. The skilled person will appreciate that when A, B and X are varied, the different ion sizes may cause the structure of the perovskite material to distort away from the structure adopted by CaTiO₃ to a lower-symmetry distorted structure. The symmetry will also be lower if the material comprises a layer that has a structure related to that of CaTiO₃. Materials comprising a layer of perovskite material are well know. For instance, the structure of materials adopting the K₂NiF₄-type structure comprises a layer of perovskite material. The skilled person will also appreciate a perovskite material could be represented by the formula [A][B][X]₃, wherein A is at least one cation, B is at least one cation and X is at least one anion. When the perovskite comprise more than one A cation, the different A cations may distributed over the A sites in an ordered or disordered way. When the perovskite comprise more than one B cation, the different B cations may distributed over the B sites in an ordered or disordered way. When the perovskite comprise more than one X anion, the different X anions may distributed over the X sites in an ordered or disordered way. The symmetry of a perovskite comprising more than one A cation, more than one B cation or more than one X cation, will be lower than that of CaTiO₃.

The term “mixed-anion”, as used herein, refers to a compound comprising at least two different anions.

The term “halide” refers to an anion of a group 7 element, i.e., of a halogen. Typically, halide refers to a fluoride anion, a chloride anion, a bromide anion, an iodide anion or an astatide anion.

The term “chalcogenide anion”, as used herein refers to an anion of group 6 element, i.e. of a chalcogen. Typically, chalcogenide refers to an oxide anion, a sulphide anion, a selenide anion or a telluride anion.

In the optoelectronic device of the invention the mixed-anion perovskite may comprise a first cation, a second cation, and said two or more different anions.

As the skilled person will appreciate, the mixed-anion perovskite may comprise further cations or further anions. For example, the mixed-anion perovskite may comprise two, three or four different cations, or two, three of four different anions.

In one embodiment, the perovskite comprises two different anions selected from halide anions and chalcogenide anions. The two different anions may be a halide anion and a chalcogenide anion, two different halide anions or two different chalcogenide anions.

Typically, in the optoelectronic device of the invention, the second cation in the mixed-anion perovskite is a metal cation. More typically, the second cation is a divalent metal cation. For instance, the second cation may be selected from Ca²⁺, Sr²⁺, Cd²⁺, Cu²⁺, Ni²⁺, Mn²⁺, Fe²⁺, Co²⁺, Pd²⁺, Ge²⁺, Sn²⁺, Pb²⁺, Sn²⁺, Yb²⁺ and Eu²⁺. Usually, the second cation is selected from Sn²⁺ and Pb²⁺.

In the optoelectronic device of the invention, the first cation in the mixed-anion perovskite is usually an organic cation.

The term “organic cation” refers to a cation comprising carbon. The cation may comprise further elements, for example, the cation may comprise hydrogen, nitrogen or oxygen.

Changes to the organic cation (or organic cations) in the perovskite will usually have an impact on the structural and/or physical properties of the perovskite. By controlling the organic cation used, the electronic properties and the optical properties of the material may be controlled. This flexible control over the properties displayed by the perovskites is particularly useful for tuning the properties of the optoelectronic device comprising said perovskite. For example, by changing the organic cation, the conductivity of the material may increase or decrease. Further, changing in organic cation may alter the band structure of the material thus, for example, allowing control of the band gap for a semiconducting material.

Usually, in the optoelectronic device of the invention, the organic cation has the formula (R₁R₂R₃R₄N)⁺, wherein: R₁ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; R₂ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; R₃ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; and R₄ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl.

As used herein, an alkyl group can be a substituted or unsubstituted, linear or branched chain saturated radical, it is often a substituted or an unsubstituted linear chain saturated radical, more often an unsubstituted linear chain saturated radical. A C₁-C₂₀ alkyl group is an unsubstituted or substituted, straight or branched chain saturated hydrocarbon radical, having from 1 to 20 carbon atoms. Typically it is C₁-C₁₀ alkyl, for example methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl or decyl, or C₁-C₆ alkyl, for example methyl, ethyl, propyl, butyl, pentyl or hexyl, or C₁-C₄ alkyl, for example methyl, ethyl, i-propyl, n-propyl, t-butyl, s-butyl or n-butyl.

When an alkyl group is substituted it typically bears one or more substituents selected from substituted or unsubstituted C₁-C₂₀ alkyl, substituted or unsubstituted aryl (as defined herein), cyano, amino, C₁-C₁₀ alkylamino, di(C₁-C₁₀)alkylamino, arylamino, diarylamino, arylalkylamino, amido, acylamido, hydroxy, oxo, halo, carboxy, ester, acyl, acyloxy, C₁-C₂₀ alkoxy, aryloxy, haloalkyl, sulfonic acid, sulfhydryl (i.e. thiol, —SH), C₁-C₁₀ alkylthio, arylthio, sulfonyl, phosphoric acid, phosphate ester, phosphonic acid and phosphonate ester. Examples of substituted alkyl groups include haloalkyl, hydroxyalkyl, aminoalkyl, alkoxyalkyl and alkaryl groups. The term alkaryl, as used herein, pertains to a C₁-C₂₀ alkyl group in which at least one hydrogen atom has been replaced with an aryl group. Examples of such groups include, but are not limited to, benzyl (phenylmethyl, PhCH₂—), benzhydryl (Ph₂CH—), trityl (triphenylmethyl, Ph₃C—), phenethyl (phenylethyl, Ph-CH₂CH₂—), styryl (Ph-CH═CH—), cinnamyl (Ph-CH═CH—CH₂—).

Typically a substituted alkyl group carries 1, 2 or 3 substituents, for instance 1 or 2.

An aryl group is a substituted or unsubstituted, monocyclic or bicyclic aromatic group which typically contains from 6 to 14 carbon atoms, preferably from 6 to 10 carbon atoms in the ring portion. Examples include phenyl, naphthyl, indenyl and indanyl groups. An aryl group is unsubstituted or substituted. When an aryl group as defined above is substituted it typically bears one or more substituents selected from C₁-C₆ alkyl which is unsubstituted (to form an aralkyl group), aryl which is unsubstituted, cyano, amino, C₁-C₁₀ alkylamino, di(C₁-C₁₀)alkylamino, arylamino, diarylamino, arylalkylamino, amido, acylamido, hydroxy, halo, carboxy, ester, acyl, acyloxy, C₁-C₂₀ alkoxy, aryloxy, haloalkyl, sulfhydryl (i.e. thiol, —SH), C₁₋₁₀ alkylthio, arylthio, sulfonic acid, phosphoric acid, phosphate ester, phosphonic acid and phosphonate ester and sulfonyl. Typically it carries 0, 1, 2 or 3 substituents. A substituted aryl group may be substituted in two positions with a single C₁-C₆ alkylene group, or with a bidentate group represented by the formula —X—(C₁-C₆)alkylene, or —X—(C₁-C₆)alkylene-X—, wherein X is selected from O, S and NR, and wherein R is H, aryl or C₁-C₆ alkyl. Thus a substituted aryl group may be an aryl group fused with a cycloalkyl group or with a heterocyclyl group. The ring atoms of an aryl group may include one or more heteroatoms (as in a heteroaryl group). Such an aryl group (a heteroaryl group) is a substituted or unsubstituted mono- or bicyclic heteroaromatic group which typically contains from 6 to 10 atoms in the ring portion including one or more heteroatoms. It is generally a 5- or 6-membered ring, containing at least one heteroatom selected from O, S, N, P, Se and Si. It may contain, for example, 1, 2 or 3 heteroatoms. Examples of heteroaryl groups include thiophenyl, pyridyl, pyrazinyl, pyrimidinyl, pyridazinyl, furanyl, thienyl, pyrazolidinyl, pyrrolyl, oxazolyl, oxadiazolyl, isoxazolyl, thiadiazolyl, thiazolyl, isothiazolyl, imidazolyl, pyrazolyl, quinolyl and isoquinolyl. A heteroaryl group may be unsubstituted or substituted, for instance, as specified above for aryl. Typically it carries 0, 1, 2 or 3 substituents.

Mainly, in the optoelectronic device of the invention, R₁ in the organic cation is hydrogen, methyl or ethyl, R₂ is hydrogen, methyl or ethyl, R₃ is hydrogen, methyl or ethyl, and R₄ is hydrogen, methyl or ethyl. For instance R₁ may be hydrogen or methyl, R₂ may be hydrogen or methyl, R₃ may be hydrogen or methyl, and R₄ may be hydrogen or methyl.

Alternatively, the organic cation may have the formula (R₅NH₃)⁺, wherein: R₅ is hydrogen, or unsubstituted or substituted C₁-C₂₀ alkyl. For instance, R₅ may be methyl or ethyl. Typically, R₅ is methyl.

In some embodiments, the organic cation has the formula (R₅R₆N═CH—NR₇R₈)⁺, wherein:

R₅ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl;

R₆ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl;

R₇ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; and

R₈ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl.

Typically, R₅ in the organic cation is hydrogen, methyl or ethyl, R₆ is hydrogen, methyl or ethyl, R₇ is hydrogen, methyl or ethyl, and R₈ is hydrogen, methyl or ethyl. For instance R₅ may be hydrogen or methyl, R₆ may be hydrogen or methyl, R₇ may be hydrogen or methyl, and R₈ may be hydrogen or methyl.

The organic cation may, for example, have the formula (H₂N═CH—NH₂)⁺.

In the optoelectronic device of the invention, the perovskite is usually a mixed-halide perovskite, wherein said two or more different anions are two or more different halide anions. Typically, they are two or three halide anions, more typically, two different halide anions. Usually the halide anions are selected from fluoride, chloride, bromide and iodide, for instance chloride, bromide and iodide.

Typically, in the optoelectronic device of the invention, the perovskite is a perovskite compound of the formula (I):

[A][B][X]₃  (I)

wherein:

[A] is at least one organic cation;

[B] is at least one metal cation; and

[X] is said two or more different anions.

For instance, the perovskite of the formula (I) may comprise one, two, three or four different metal cations, typically one or two different metal cations. The perovskite of the formula (I), may, for instance, comprise one, two, three or four different organic cations, typically one or two different organic cations. The perovskite of the formula (I), may, for instance, comprise two, three or four different anions, typically two or three different anions.

Often, in the optoelectronic device of the invention, [X] is a halide anion and a chalcogenide anion, two different halide anions or two different chalcogenide anions.

Typically, in the optoelectronic device of the invention, [B] in the mixed-anion perovskite is at least one metal cation. More typically, [B] is at least one divalent metal cation. For instance, [B] is at least one divalent metal cation may be selected from Ca²⁺, Sr²⁺, Cd²⁺, Cu²⁺, Ni²⁺, Mn²⁺, Fe²⁺, Co²⁺, Pd²⁺, Ge²⁺, Sn²⁺, Pb²⁺, Sn²⁺, Yb²⁺ and Eu²⁺. Usually, [B] is at least one divalent metal cation is selected from Sn²⁺ and Pb²⁺.

Usually, in the optoelectronic device of the invention, [A] is at least one organic cation which has the formula (R₁R₂R₃R₄N)⁺, wherein:

R₁ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl;

R₂ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl;

R₃ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; and

R₄ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl.

[A] may however be at least one organic cation which has the formula (R₅R₆N═CH—NR₇R₈)⁺, wherein: R₅ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; R₆ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; R₇ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; and R₈ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl.

In one embodiment, the perovskite is a perovskite compound of the formula (IA):

AB[X]₃  (IA)

wherein:

A is an organic cation;

B is a metal cation; and

[X] is said two or more different anions.

Usually, [X] is two or more different halide anions. Preferably, [X] is two or three different halide anions. More preferably, [X] is two different halide anions. In another embodiment [X] is three different halide anions.

Often, in the optoelectronic device of the invention, [X] is a halide anion and a chalcogenide anion, two different halide anions or two different chalcogenide anions.

Typically, in the optoelectronic device of the invention, B is a divalent metal cation. For instance, B is a divalent metal cation may be selected from Ca²⁺, Sr²⁺, Cd²⁺, Cu²⁺, Ni²⁺, Mn²⁺, Fe²⁺, Co²⁺, Pd²⁺, Ge²⁺, Sn²⁺, Pb²⁺, Sn²⁺, Yb²⁺ and Eu²⁺. Usually, B is a divalent metal cation is selected from Sn²⁺ and Pb²⁺.

Usually, in the optoelectronic device of the invention, A is an organic cation which has the formula (R₁R₂R₃R₄N)⁺, wherein:

R₁ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl;

R₂ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl;

R₃ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; and

R₄ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl.

A may however be at least one organic cation which has the formula (R₅R₆N═CH—NR₇R₈)⁺, wherein: R₅ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; R₆ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; R₇ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; and R₈ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl.

Typically, in the optoelectronic device of the invention, the perovskite is a perovskite compound of formula (II):

ABX_(3−y)X′_(y)  (II)

wherein:

A is an organic cation;

B is a metal cation;

X is a first halide anion;

X′ is a second halide anion which is different from the first halide anion; and

y is from 0.05 to 2.95.

Usually, y is from 0.5 to 2.5, for instance from 0.75 to 2.25. Typically, y is from 1 to 2.

Often, in the optoelectronic device of the invention, X is a halide anion and X′ is a chalcogenide anion, or X and X′ are two different halide anions or two different chalcogenide anions.

Typically, in the optoelectronic device of the invention, B may be a divalent metal cation. For instance, B is a divalent metal cation may be selected from Ca²⁺, Sr²⁺, Cd²⁺, Cu²⁺, Mn²⁺, Fe²⁺, Co²⁺, Pd²⁺, Ge²⁺, Sn²⁺, Pb²⁺, Sn²⁺, Yb²⁺ and Eu²⁺. Usually, B is a divalent metal cation selected from Sn²⁺ and Pb²⁺.

Usually, in the optoelectronic device of the invention, A is an organic cation which has the formula (R₁R₂R₃R₄N)⁺, wherein:

R₁ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl;

R₂ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl;

R₃ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; and

R₄ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl.

In some embodiments of the optoelectronic device of the invention, when [B] is a single metal cation which is Pb²⁺, one of said two or more different halide anions is iodide or fluoride; and when [B] is a single metal cation which is Sn²⁺ one of said two or more different halide anions is fluoride. Usually, in some embodiments of the optoelectronic device of the invention, one of said two or more different halide anions is iodide or fluoride. Typically, in some embodiments of the optoelectronic device of the invention, one of said two or more different halide anions is iodide and another of said two or more different halide anions is fluoride or chloride. Often, in some embodiments of the optoelectronic device of the invention, one of said two or more different halide anions is fluoride. Typically, in some embodiments of the optoelectronic device of the invention, either: (a) one of said two or more different anions is fluoride and another of said said two or more different anions is chloride, bromide or iodide; or (b) one of said two or more different anions is iodide and another of said two or more different anions is fluoride or chloride.

Usually, in the optoelectronic device of the invention, [X] is two different halide anions X and X′.

Often, in the optoelectronic device of the invention, said divalent metal cation is Sn²⁺. Alternatively, in some embodiments of the optoelectronic device of the invention, said divalent metal cation may be Pb²⁺.

In some embodiments, in the optoelectronic device of the invention, the perovskite is a perovskite compound of formula (IIa):

ABX_(3z)X′_(3(1−z))  (IIa)

wherein:

A is an organic cation of the formula (R₅R₆N—CH—NR₇R₈)⁺, wherein: R₅ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; R₆ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; R₇ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; and R₈ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl;

B is a metal cation;

X is a first halide anion;

X′ is a second halide anion which is different from the first halide anion; and

z is greater than 0 and less than 1.

Usually, z is from 0.05 to 0.95.

Preferably, z is from 0.1 to 0.9. z may, for instance, be 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8 or 0.9, or z may be a range of from any one of these values, to any other of these values (for instance from 0.2 to 0.7, or from 0.1 to 0.8).

Typically, X is a halide anion and X′ is a chalcogenide anion, or X and X′ are two different halide anions or two different chalcogenide anions. Usually, X and X′ are two different halide anions. For instance, one of said two or more different halide anions may be iodide and another of said two or more different halide anions may be bromide.

Usually, B is a divalent metal cation. For instance, B may be a divalent metal cation, selected from Ca²⁺, Sr²⁺, Cd²⁺, Cu²⁺, Ni²⁺, Mn²⁺, Fe²⁺, Co²⁺, Pd²⁺, Ge²⁺, Sn²⁺, Pb²⁺, Sn²⁺, Yb²⁺ and Eu²⁺. Usually, B is a divalent metal cation selected from Sn²⁺ and Pb²⁺. For instance, B may be Pb²⁺.

The organic cation may, for instance, be (R₅R₆N═CH—NR₇R₈)⁺, wherein: R₅, R₆, R₇ and R₈ are independently selected from hydrogen and unsubstituted or substituted C₁-C₆ alkyl. For instance, the organic cation may be (H₂N═CH—NH₂)⁺.

In the optoelectronic device of the invention, the perovskites is typically selected from CH₃NH₃PbBrI₂, CH₃NH₃PbBrCl₂, CH₃NH₃PbIBr₂, CH₃NH₃PbICl₂, CH₃NH₃PbClBr₂, CH₃NH₃PbI₂Cl, CH₃NH₃SnBrI₂, CH₃NH₃SnBrCl₂, CH₃NH₃SnF₂Br, CH₃NH₃SnIBr₂, CH₃NH₃SnICl₂, CH₃NH₃SnF₂I, CH₃NH₃SnClBr₂, CH₃NH₃SnI₂Cl and CH₃NH₃SnF₂Cl. Typically, the perovskite is selected from CH₃NH₃PbBrI₂, CH₃NH₃PbBrCl₂, CH₃NH₃PbIBr₂, CH₃NH₃PbICl₂, CH₃NH₃PbClBr₂, CH₃NH₃PbI₂Cl, CH₃NH₃SnF₂Br, CH₃NH₃SnICl₂, CH₃NH₃SnF₂I, CH₃NH₃SnI₂Cl and CH₃NH₃SnF₂Cl. More typically, the perovskite is selected from CH₃NH₃PbBrI₂, CH₃NH₃PbBrCl₂, CH₃NH₃PbIBr₂, CH₃NH₃PbICl₂, CH₃NH₃PbClBr₂, CH₃NH₃PbI₂Cl, CH₃NH₃SnF₂Br, CH₃NH₃SnF₂I and CH₃NH₃SnF₂Cl. Usually, the perovskite is selected from CH₃NH₃PbBrI₂, CH₃NH₃PbBrCl₂, CH₃NH₃PbIBr₂, CH₃NH₃PbICl₂, CH₃NH₃SnF₂Br, and CH₃NH₃SnF₂I.

In some embodiments, the perovskite may be a perovskite of formula (H₂N═CH—NH₂)PbI_(3z)Br_(3(1−z)), wherein z is greater than 0 and less than 1. z may be as further defined hereinbefore.

The optoelectronic device of the invention may comprise said perovskite and a single-anion perovskite, wherein said single anion perovskite comprises a first cation, a second cation and an anion selected from halide anions and chalcogenide anions; wherein the first and second cations are as herein defined for said mixed-anion perovskite. For instance, the optoelectronic device may comprise: CH₃NH₃PbICl₂ and CH₃NH₃PbI₃; CH₃NH₃PbICl₂ and CH₃NH₃PbBr₃; CH₃NH₃PbBrCl₂ and CH₃NH₃PbI₃; or CH₃NH₃PbBrCl₂ and CH₃NH₃PbBr₃.

The optoelectronic device may comprise a perovskite of formula (H₂N═CH—NH₂)PbI_(3z)Br_(3(1−z)), wherein z is as defined herein, and a single-anion perovskite such as (H₂N═CH—NH₂)PbI₃ or (H₂N═CH—NH₂)PbBr₃.

Alternatively, the optoelectronic device of the invention may comprise more than one perovskite, wherein each perovskite is a mixed-anion perovskite, and wherein said mixed-anion perovskite is as herein defined. For instance, the optoelectronic device may comprise two or three said perovskites. The optoelectronic device of the invention may, for instance, comprise two perovskites wherein both perovskites are mixed-anion perovskites. For instance, the optoelectronic device may comprise: CH₃NH₃PbICl₂ and CH₃NH₃PbIBr₂; CH₃NH₃PbICl₂ and CH₃NH₃PbBrI₂; CH₃NH₃PbBrCl₂ and CH₃NH₃PbIBr₂; or CH₃NH₃PbBrCl₂ and CH₃NH₃PbIBr₂.

The optoelectronic device may comprise two different perovskites, wherein each perovskite is a perovskite of formula (H₂N═CH—NH₂)PbI_(3z)Br_(3(1−z)), wherein z is as defined herein.

The optoelectronic device of the invention is typically an optoelectronic device selected from: a photovoltaic device; a photodiode; a phototransistor; a photomultiplier; a photo resistor; a photo detector; a light-sensitive detector; solid-state triode; a battery electrode; a light-emitting device; a light-emitting diode; a transistor; a solar cell; a laser; and a diode injection laser.

Usually, the optoelectronic device of the invention is a photovoltaic device. More usually, the device is a solar cell.

Alternatively, the optoelectronic device of the invention may be a light-emitting device, for instance, a light-emitting diode.

In one embodiment, the optoelectronic device of the invention, is an optoelectronic device comprising:

a first electrode;

a second electrode; and, disposed between the first and second electrodes:

(a) said perovskite.

The first and second electrodes are an anode and a cathode, one or both of which is transparent to allow the ingress of light. The choice of the first and second electrodes of the optoelectronic devices of the present invention may depend on the structure type. Typically, the n-type layer is deposited onto a tin oxide, more typically onto a fluorine-doped tin oxide (FTO) anode, which is usually a transparent or semi-transparent material. Thus, the first electrode is usually transparent or semi-transparent and typically comprises FTO. Usually, the thickness of the first electrode is from 200 nm to 600 nm, more usually, from 300 to 500 nm. For instance the thickness may be 400 nm. Typically, FTO is coated onto a glass sheet. Usually, the second electrode comprises a high work function metal, for instance gold, silver, nickel, palladium or platinum, and typically silver. Usually, the thickness of the second electrode is from 50 nm to 250 nm, more usually from 100 nm to 200 nm. For instance, the thickness of the second electrode may be 150 nm.

As used herein, the term “thickness” refers to the average thickness of a component of an optoelectronic device.

Typically, the optoelectronic device of the invention is an optoelectronic device comprising:

a first electrode;

a second electrode; and, disposed between the first and second electrodes:

(a) a thin film comprising said perovskite.

In one embodiment, the optoelectronic device of the invention is an optoelectronic device comprising:

a first electrode;

a second electrode; and, disposed between the first and second electrodes:

(a) a layer of a semiconductor; and

(b) said perovskite.

The term “semiconductor” as used herein refers to a material with electrical conductivity intermediate in magnitude between that of a conductor and an insulator. The semiconductor may be an intrinsic semiconductor, an n-type semiconductor or a p-type semiconductor. Examples of semiconductors include perovskites; oxides of titanium, niobium, tin, zinc, cadmium, copper or lead; chalcogenides of antimony, copper, zinc, iron, or bismuth (e.g. copper sulphide and iron sulphide); copper zinc tin chalcogenides, for example, copper zinc tin sulphides such a Cu₂ZnSnS₄ (CZTS) and copper zinc tin sulphur-selenides such as Cu₂ZnSn(S_(1−x)Se_(x))₄ (CZTSSe); copper indium chalcogenides such as copper indium selenide (CIS); copper indium gallium chalcogenides such as copper indium gallium selenides (CuIn_(1−x)Ga_(x)Se₂) (CIGS); and copper indium gallium diselenide. Further examples are group IV compound semiconductors (e.g. silicon carbide); group III-V semiconductors (e.g. gallium arsenide); group II-VI semiconductors (e.g. cadmium selenide); group I-VII semiconductors (e.g. cuprous chloride); group IV-VI semiconductors (e.g. lead selenide); group V-VI semiconductors (e.g. bismuth telluride); and group II-V semiconductors (e.g. cadmium arsenide); ternary or quaternary semiconductors (eg. Copper Indium Selenide, Copper indium gallium di-selenide, copper zinc tin sulphide, or copper zinc tin sulphide selenide (CZTSSe).

Usually, the optoelectronic device of the invention, is an optoelectronic device comprising: a first electrode; a second electrode; and, disposed between the first and second electrodes: (a) an n-type layer; and (b) said perovskite.

As used herein, the term “n-type layer”, refers to a layer comprising an n-type, or electron transporting material.

Alternatively, the optoelectronic device of the invention, is an optoelectronic device comprising: a first electrode; a second electrode; and, disposed between the first and second electrodes: (a) a p-type layer; and (b) said perovskite.

The term “p-type layer”, as used herein, refers to a layer comprising a p-type, or hole transporting material.

In one embodiment, the optoelectronic device of the invention, is an optoelectronic device comprising:

a first electrode;

a second electrode; and, disposed between the first and second electrodes:

(a) an n-type layer;

(b) said perovskite; and

(c) a p-type layer.

The optoelectronic device of this embodiment may be any of those listed above, for instance a photovoltaic device. The perovskite is typically a sensitizer material.

The term “sensitizer”, as used herein, refers to a material which is capable of performing photoinduced charge generation, photoemission or electroemission.

Often, the sensitizer is also capable of transporting charge (holes or electrons). For instance, when the sensitizer is said perovskite, the sensitizer is also capable of transporting charge.

Usually, the n-type layer comprises a metal oxide semiconductor and the p-type layer comprises a hole transporting material. The metal oxide semiconductor and the hole transporting material are as herein defined.

Alternatively, the p-type layer comprises a metal oxide semiconductor and the n-type layer comprises an electron transporting material. For instance, the metal oxide semiconductor may comprise an oxide of nickel, molybdenum, copper or vanadium, or a mixture thereof. Often, the electron transporting material comprises a fullerene or perylene, or derivatives thereof, poly{[N,N0-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,50-(2,20-bithiophene)} (P(NDI2OD-T2)), or an electrolyte.

In one embodiment, the optoelectronic device may be a thin film device. Usually, the n-type layer will comprise a metal oxide, metal sulphide, metal selenide or metal telluride. Often, the metal oxide will be an oxide an oxide of titanium, tin, zinc, niobium, tantalum, tungsten, indium, gallium, neodinium, palladium or cadmium, or a mixture thereof. For instance, the n-type layer may comprise TiO₂, SnO₂, ZnO, Nb₂O₅, Ta₂O₅, WO₃, W₂O₅, In₂O₃, Ga₂O₃, Nd₂O₃, PbO, or CdO. Often, the metal oxide is TiO₂. Typically, the sulphide will be a sulphide of cadmium, tin, copper, zinc or a mixture thereof. For instance, the sulphide may be FeS₂, CdS or Cu₂ZnSnS₄. Usually, the selenide will be a selenide of cadmium, zinc, indium or gallium or a mixture thereof. For instance, the selenide may be Cu(In,Ga)Se₂. Typically, the tellenide is a tellenide of cadmium, zinc, cadmium or tin. For instance, the tellenide may be CdTe.

The optoelectronic device may comprise a tunnel junction. For instance, the optoelectronic device may be a multi junction solar cell or tandem cell.

In one embodiment, the optoelectronic device of the invention is an optoelectronic device comprising:

a first electrode;

a second electrode; and, disposed between the first and second electrodes:

(a) a porous layer of a semiconductor; and

(b) a sensitizer material comprising said perovskite.

Typically, the optoelectronic device of the invention is an optoelectronic device comprising: a first electrode; a second electrode; and, disposed between the first and second electrodes: (a) a porous layer of a semiconductor; (b) a sensitizer material comprising said perovskite; and (c) a charge transporting material.

The optoelectronic device of the invention may, for instance, be an optoelectronic device comprising:

a first electrode;

a second electrode; and, disposed between the first and second electrodes:

(a) a porous layer of a semiconductor, which is a porous layer of a p-type semiconductor;

(b) a sensitizer material comprising said perovskite; and

(c) a charge transporting material, which is an electron transporting material.

Usually, when the porous layer of a semiconductor is a porous layer of a p-type semiconductor, the porous layer comprises an oxide of nickel, vanadium, copper or molybdenum. For instance, the porous layer may comprise NiO, V₂O₅, MoO₃ or CuO.

Typically, the porous layer of a p-type semiconductor is in contact with a compact layer of a p-type semiconductor. For instance, the compact layer of a p-type semiconductor may comprise oxide of nickel, vanadium, copper or molybdenum. Usually, compact layer of a p-type semiconductor comprises NiO, V₂O₅, MoO₃ or CuO.

Often, when the charge transporting material is an electron transporting material, the charge transporting material comprises a fullerene or perylene, or derivatives thereof, or P(NDI2OD-T2)). For instance, the charge transporting material may be P(NDI2OD-T2).

Alternatively, the optoelectronic device of the invention may be a photovoltaic device comprising:

a first electrode;

a second electrode; and, disposed between the first and second electrodes:

(a) a porous layer of a semiconductor, which is a porous layer of an n-type semiconductor;

(b) a sensitizer material comprising said perovskite; and

(c) a charge transporting material, which is a hole transporting material.

Typically, when the porous layer of a semiconductor is a porous layer of an n-type semiconductor, the porous layer of an n-type semiconductor comprises: an oxide of titanium, tin, zinc, niobium, tantalum, tungsten, indium, gallium, neodinium, palladium or cadmium, or a mixture thereof. For instance, the porous layer of a semiconductor may comprise TiO₂, SnO₂, ZnO, Nb₂O₅, Ta₂O₅, WO₃, W₂O₅, In₂O₃, Ga₂O₃, Nd₂O₃, PbO, or CdO. Often, the porous layer of an n-type semiconductor comprises a mesoporous oxide of titanium, tin, zinc, niobium, tantalum, tungsten, indium, gallium, neodinium, palladium or cadmium or a mixture thereof.

The term “mesoporous”, as used herein means that the pores in the porous layer are microscopic and have a size which is usefully measured in nanometres (nm). The mean pore size of the pores within a “mesoporous” structure may for instance be anywhere in the range of from 1 nm to 100 nm, or for instance from 2 nm to 50 nm. Individual pores may be different sizes and may be any shape. The term “pore size”, as used herein, defines the size of the pores. For spherical pores, the pore size is equal to the diameter of the sphere. For pores that are not spherical, the pore size is equal to the diameter of a sphere, the volume of said sphere being equal to the volume of the non-spherical pore. This definition of pore size applies to the pores within said mesoporous single crystal and the pores within said porous template.

Usually, when the porous layer of a semiconductor is a porous layer of an n-type semiconductor the porous layer of a semiconductor comprises TiO₂. More usually, the porous layer comprises mesoporous TiO₂.

Often, the porous layer of an n-type semiconductor is in contact with a compact layer of an n-type semiconductor. Usually, the compact layer of an n-type semiconductor comprises oxide of titanium, tin, zinc, niobium, tantalum, tungsten, indium, gallium, neodinium, palladium or cadmium, or a mixture thereof. Typically, the compact layer of an n-type semiconductor comprises TiO₂. Usually, the compact layer of an n-type semiconductor has a thickness of from 50 nm to 200 nm, typically a thickness of about 100 nm.

When the charge transporting material is an hole transporting material, the hole transporting material in the optoelectronic device of the invention may be any suitable p-type or hole-transporting, semiconducting material. Typically, the hole transporting material is a small molecular or polymer-based hole conductor.

Typically, when the charge transporting material is an hole transporting material, the charge transporting material is a solid state hole transporting material or a liquid electrolyte.

Often, when the charge transporting material is an hole transporting material, the charge transporting material is a polymeric or molecular hole transporter. Typically, the hole transporting material comprises spiro-OMeTAD (2,2′,7,7′-tetrakis-(N,N-di-p-methoxyphenylamine)9,9′-spirobifluorene)), P3HT (poly(3-hexylthiophene)), PCPDTBT (Poly[2,1,3-benzothiadiazole-4,7-diyl[4,4-bis(2-ethylhexyl)-4H-cyclopenta[2,1-b:3,4-b′]dithiophene-2,6-diyl]]), PVK (poly(N-vinylcarbazole)), HTM-TFSI (1-hexyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide), Li-TFSI (lithium bis(trifluoromethanesulfonyl)imide) or tBP (tert-butylpyridine). Usually, the hole transporting material is selected from spiro-OMeTAD, P3HT, PCPDTBT and PVK. Preferable, the hole transporting material is spiro-OMeTAD.

When the charge transporting material is an hole transporting material, the charge transporting material may, for instance, be a molecular hole transporter, or a polymer or copolymers. Often, the charge transporting material is a molecular hole transporting material, a polymer or copolymer comprises one or more of the following moieties: thiophenyl, phenelenyl, dithiazolyl, benzothiazolyl, diketopyrrolopyrrolyl, ethoxydithiophenyl, amino, triphenyl amino, carbozolyl, ethylene dioxythiophenyl, dioxythiophenyl, or fluorenyl.

Alternatively, when the charge transporting material is an hole transporting material, the charge transporting material may be an inorganic hole transporter, for instance, CuI, CuBr, CuSCN, Cu₂O, CuO or CIS.

In one embodiment, in the optoelectronic device of the invention, the porous layer of a semiconductor has a thickness of from 50 nm to 3 μm, for instance the thickness may be from 100 nm to 2 μm. Often, the porous layer of an n-type semiconductor has a thickness of 0.6 μm.

Typically, in the optoelectronic device of the invention, the distance between the second electrode and the porous layer of an n-type semiconductor is from 50 nm to 400 nm, more typically from 150 nm to 250 nm. Often, the distance between the second electrode and the porous layer of an n-type semiconductor is around 200 nm.

Often, the optoelectronic device of the invention is a photovoltaic device, wherein the AM1.5G 100 mWcm⁻² power conversion efficiency of the device is equal to or greater than 7.3%. Typically, the AM1.5G 100 mWcm⁻² power conversion efficiency of the device is equal to or greater than 11.5%.

Typically, the optoelectronic device of the invention is a photovoltaic device, wherein the photocurrent is equal to or greater than 15 mAcm⁻². More typically, the optoelectronic device of the invention is a photovoltaic device, wherein the photocurrent is equal to or greater than 20 mAcm⁻².

Usually, in the optoelectronic device of the invention the perovskite does not decompose when exposed to oxygen or moisture for a period of time equal to or greater than 10 minutes. Typically, the perovskite does not decompose when exposed to oxygen or moisture for a period of time equal to or greater than 24 hours.

The invention further provides a mixed-halide perovskite of the formula (I)

[A][B][X]₃  (I)

wherein:

[A] is at least one organic cation of the formula (R₁R₂R₃R₄N)⁺, wherein:

-   -   (i) R₁ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl,         or unsubstituted or substituted aryl;     -   (ii) R₂ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl,         or unsubstituted or substituted aryl;     -   (iii) R₃ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl,         or unsubstituted or substituted aryl; and     -   (iv) R₄ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl,         or unsubstituted or substituted aryl;

[B] is at least one divalent metal cation; and

[X] is said two or more different halide anions.

Usually, the following proviso apply:

(i) when A is an organic cation which is (CH₃NH₃)⁻⁴ and B is a divalent metal cation which is Sn²⁺, the mixed-halide perovskite does not comprise: (a) a chloride ion and a bromide ion, or (b) a bromide ion and an iodide ion; and

(ii) when A is an organic cation which is (CH₃NH₃)⁺ and B is a divalent metal cation which is Pb²⁺, the mixed-halide perovskite does not comprise a chloride ion and a bromide ion.

Often, the mixed-halide perovskite is a mixed-halide perovskite of the formula (I)

[A][B][X]₃  (I)

wherein:

[A] is at least one organic cation of the formula (R₁R₂R₃R₄N)⁺, wherein:

-   -   (i) R₁ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl,         or unsubstituted or substituted aryl;     -   (ii) R₂ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl,         or unsubstituted or substituted aryl;     -   (iii) R₃ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl,         or unsubstituted or substituted aryl; and     -   (iv) R₄ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl,         or unsubstituted or substituted aryl;

[B] is at least one divalent metal cation; and

[X] is said two or more different halide anions.

Usually, the following proviso apply:

(i) when A is an organic cation which is (CH₃NH₃)⁺ and B is a divalent metal cation which is Sn²⁺, the mixed-halide perovskite does not comprise: (a) a chloride ion and a bromide ion, (b) a bromide ion and an iodide ion; or (c) a chloride ion and an iodide ion; and

(ii) when A is an organic cation which is (CH₃NH₃)⁺ and B is a divalent metal cation which is Pb²⁺, the mixed-halide perovskite does not comprise a chloride ion and a bromide ion.

Often, the mixed-halide perovskite is a mixed-halide perovskite of the formula (I)

[A][B][X]₃  (I)

wherein:

[A] is at least one organic cation of the formula (R₁R₂R₃R₄N)⁺, wherein:

-   -   (i) R₁ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl,         or unsubstituted or substituted aryl;     -   (ii) R₂ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl,         or unsubstituted or substituted aryl;     -   (iii) R₃ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl,         or unsubstituted or substituted aryl; and     -   (iv) R₄ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl,         or unsubstituted or substituted aryl;

[B] is at least one divalent metal cation; and

[X] is said two or more different halide anions.

provided that (i) when [A] is a single organic cation which is (CH₃NH₃)⁺ and [B] is a single metal cation which is Sn²⁺, the mixed-halide perovskite does not comprise: (a) a chloride ion and a bromide ion, or (b) a bromide ion and an iodide ion; and (ii) when [A] is a single organic cation which is (CH₃NH₃)⁺ and [B] is a single metal cation which is Pb²⁺, the mixed-halide perovskite does not comprise a chloride ion and a bromide ion.

The perovskite of the formula (I) may comprise one, two three, or four different divalent metal cations, typically one or two different divalent metal cations. The perovskite of the formula (I), may, for instance, comprise one, two, three or four different organic cations of the formula (R₁R₂R₃R₄N)⁺, typically one or two different organic cations of the formula (R₁R₂R₃R₄N)⁺. The perovskite of the formula (I) may, for instance, comprise two, three or four different halide anions, typically two or three different halide anions.

Often, in the mixed-halide perovskite of the invention, when [B] is a single metal cation which is Pb²⁺, one of said two or more different halide anions is iodide or fluoride; and when [B] is a single metal cation which is Sn²⁺ one of said two or more different halide anions is fluoride.

Typically, in the mixed-halide perovskite of the invention, one of said two or more different halide anions is iodide or fluoride.

Usually, in the mixed-halide perovskite of the invention, one of said two or more different halide anions is fluoride.

Typically, in the mixed-halide perovskite of the invention [X] is two different halide anions X and X′. Typically, they are two or three halide anions, more typically, two different halide anions. Usually the halide anions are selected from fluoride, chloride, bromide and iodide, for instance chloride, bromide and iodide. Alternatively, [X] may be three different halide ions.

Usually, in the mixed-halide perovskite of the invention [B] is at least one divalent metal cation selected from Ca²⁺, Sr²⁺, Cd²⁺, Cu²⁺, Ni²⁺, Mn²⁺, Fe²⁺, Co²⁺, Pd²⁺, Ge²⁺, Sn²⁺, Pb²⁺, Sn²⁺, Yb²⁺, and Eu²⁺. More usually, [B] is at least one divalent metal cation selected from Sn²⁺ and Pb²⁺.

Typically, [B] is a single divalent metal cation. The single divalent metal cation may Mn²⁺, Fe²⁺, Co²⁺, Pd²⁺, Ge²⁺, Sn²⁺, be selected from Ca²⁺, Sr²⁺, Cd²⁺, Cu²⁺, Ni²⁺, Yb²⁺, and Eu²⁺. More usually, [B] is a single divalent metal cation which is Sn²⁺ or Pb²⁺.

Mainly, in the mixed-halide perovskite of the invention R₁ in the organic cation is hydrogen, methyl or ethyl, R₂ is hydrogen, methyl or ethyl, R₃ is hydrogen, methyl or ethyl, and R₄ is hydrogen, methyl or ethyl. For instance R₁ may be hydrogen or methyl, R₂ may be hydrogen or methyl, R₃ may be hydrogen or methyl, and R₄ may be hydrogen or methyl.

Typically, in the mixed-halide perovskite of the invention the organic cation of the formula (R₅NH₃)⁺, wherein R₅ is hydrogen, or unsubstituted or substituted C₁-C₂₀ alkyl. R₅ may, for instance, be methyl or ethyl. Typically, R₅ is methyl.

In one embodiment, the mixed-halide perovskite of the invention is a perovskite compound of formula (II):

ABX_(3−y)X′_(y)  (II)

wherein:

A is an organic cation;

B is a divalent metal cation;

X is a first halide anion;

X′ is a second halide anion which is different from the first halide anion; and

y is from 0.05 to 2.95.

provided that:

(i) when A is an organic cation which is (CH₃NH₃)⁺ and B is a divalent metal cation which is Sn²⁺, the mixed-halide perovskite does not comprise: (a) a chloride ion and a bromide ion, or (b) a bromide ion and an iodide ion; and

(ii) when A is an organic cation which is (CH₃NH₃)⁺ and B is a divalent metal cation which is Pb²⁺, the mixed-halide perovskite does not comprise a chloride ion and a bromide ion.

Usually, y is from 0.5 to 2.5, for instance from 0.75 to 2.25. Typically, y is from 1 to 2.

Typically, X is iodide and X′ is fluoride or chloride, or X is fluoride and X′ is chloride, bromide or iodide.

Often X or X′ is iodide.

Typically, B is other than Sn²⁺.

Usually, in the mixed-halide perovskite of the invention, X is iodide and X′ is fluoride or chloride.

More usually, X or X′ is fluoride.

Typically, in the mixed-halide perovskite of the invention, B is Sn²⁺.

Alternatively, in the mixed-halide perovskite of the invention, B is Pb²⁺.

The mixed-halide perovskite of the invention is often selected from CH₃NH₃PbBrI₂, CH₃NH₃PbIBr₂, CH₃NH₃PbICl₂, CH₃NH₃PbI₂Cl, CH₃NH₃SnF₂Br, CH₃NH₃SnICl₂, CH₃NH₃SnF₂I, CH₃NH₃SnI₂Cl and CH₃NH₃SnF₂Cl. More often, the mixed-halide perovskite of the invention is often selected from CH₃NH₃PbBrI₂, CH₃NH₃PbIBr₂, CH₃NH₃PbICl₂, CH₃NH₃PbI₂Cl, CH₃NH₃SnF₂Br, CH₃NH₃SnF₂I and CH₃NH₃SnF₂Cl. Usually, the perovskite is selected from CH₃NH₃PbBrI₂, CH₃NH₃PbIBr₂, CH₃NH₃PbICl₂, CH₃NH₃SnF₂Br, and CH₃NH₃SnF₂I.

Usually, the mixed-halide perovskite of the invention does not decompose when exposed to oxygen or moisture for a period of time equal to or greater than 10 minutes. Typically, the perovskite does not decompose when exposed to oxygen or moisture for a period of time equal to or greater than 24 hours.

The invention further provides mixed-halide perovskite of the formula (I)

[A][B][X]₃  (I)

wherein:

[A] is at least one organic cation of the formula (R₅R₆N═CH—NR₇R₈)⁺, wherein:

(i) R₅ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl;

(ii) R₆ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl;

(iii) R₇ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; and

(iv) R₈ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl:

[B] is at least one divalent metal cation; and

[X] is two or more different halide anions.

The perovskite of the formula (I) may comprise one, two three, or four different divalent metal cations, typically one or two different divalent metal cations. The perovskite of the formula (I), may, for instance, comprise one, two, three or four different organic cations of the formula (R₅R₆N═CH—NR₇R₈)⁺, typically one or two different organic cations of the formula (R₅R₆N═CH—NR₇R₈)⁺. The perovskite of the formula (I) may, for instance, comprise two, three or four different halide anions, typically two or three different halide anions.

Typically, [X] is two different halide anions X and X′. Typically, they are two or three halide anions, more typically, two different halide anions. Usually the halide anions are selected from fluoride, chloride, bromide and iodide, for instance chloride, bromide and iodide. The halide anions may, for instance, be iodine and bromine. Alternatively, [X] may be three different halide ions.

Usually, [B] is at least one divalent metal cation selected from Ca²⁺, Sr²⁺, Cd²⁺, Cu²⁺, Ni²⁺, Mn²⁺, Fe²⁺, Co²⁺, Pd²⁺, Ge²⁺, Sn²⁺, Pb²⁺, Sn²⁺, Yb²⁺, and Eu²⁺. More usually, [B] is at least one divalent metal cation selected from Sn²⁺ and Pb²⁺, for instance, Pb²⁺.

Typically, [B] is a single divalent metal cation. The single divalent metal cation may be selected from Ca²⁺, Sr²⁺, Cd²⁺, Cu²⁺, Ni²⁺, Mn²⁺, Fe²⁺, Co²⁺, Pd²⁺, Ge²⁺, Sn²⁺, Pb²⁺, Sn²⁺, Yb²⁺, and Eu²⁺. More usually, [B] is a single divalent metal cation which is Sn²⁺ or Pb²⁺, for instance, Pb²⁺.

Mainly, in the mixed-halide perovskite of the invention R₅ in the organic cation is hydrogen, methyl or ethyl, R₆ is hydrogen, methyl or ethyl, R₇ is hydrogen, methyl or ethyl, and R8 is hydrogen, methyl or ethyl. For instance R₅ may be hydrogen or methyl, R₆ may be hydrogen or methyl, R₇ may be hydrogen or methyl, and R₈ may be hydrogen or methyl.

Typically, in the mixed-halide perovskite of the invention the organic cation of the formula (H₂N═CH—NH₂)⁺.

In one embodiment, the mixed-halide perovskite is a perovskite compound of formula (IIa):

ABX_(3z)X′_(3(1−z))  (IIa)

wherein:

A is an organic cation of the formula (R₅R₆N═CH—NR₇R₈)⁺, wherein:

(i) R₅ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl;

(ii) R₆ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl;

(iii) R₇ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; and

(iv) R₈ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl;

B is an metal cation selected from Sn²⁺ and Pb²⁺;

X is a first halide anion;

X′ is a second halide anion which is different from the first halide anion; and

z is greater than 0 and less than 1.

Usually, z is from 0.05 to 0.95, for instance, from 0.1 to 0.9. z may, for instance, be 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8 or 0.9, or z may be a range of from any one of these values to any other of these values (for instance from 0.2 to 0.7, or from 0.1 to 0.8).

Typically, X is iodide and X′ is fluoride, bromide or chloride, for instance, X is iodide and X′ is bromide.

Typically, B is Pb²⁺.

Usually, the organic cation is (R₅R₆N═CH—NR₇R₈)⁺, wherein: R₅, R₆, R₇ and R₈ are independently selected from hydrogen and unsubstituted or substituted C₁-C₆ alkyl. For instance, the organic cation may be (H₂N═CH—NH₂)⁺.

The mixed-halide perovskite may, for instance, have the formula: (H₂H═CHNH₂)PbI_(3z)Br_(3(1−z)), wherein z is greater than 0 and less than 1. Usually, z is from 0.05 to 0.95, for instance, from 0.1 to 0.9. z may, for instance, be 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8 or 0.9, or z may be a range of from any one of these values to any other of these values (for instance z may be from 0.2 to 0.7, or from 0.1 to 0.8).

Usually, the mixed-halide perovskite of the invention does not decompose when exposed to oxygen or moisture for a period of time equal to or greater than 10 minutes. Typically, the perovskite does not decompose when exposed to oxygen or moisture for a period of time equal to or greater than 24 hours.

The invention further provides the use of a mixed-anion perovskite as a sensitizer in an optoelectronic device, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The perovskite is a perovskite as defined herein.

Often, in the use of the invention, the optoelectronic device is a photovoltaic device.

Alternatively, in the use of the invention, the optoelectronic device is a light-emitting device, for instance a light-emitting diode.

Usually, the optoelectronic device of the invention is a photovoltaic device, wherein the AM1.5G 100 mWcm⁻² power conversion efficiency of the device is equal to or greater than 7.3%. Typically, the AM1.5G 100 mWcm⁻² power conversion efficiency of the device is equal to or greater than 11.5%.

Typically, the optoelectronic device of the invention is a photovoltaic device, wherein the photocurrent is equal to or greater than 15 mAcm⁻². More typically, the optoelectronic device of the invention is a photovoltaic device, wherein the photocurrent is equal to or greater than 20 mAcm⁻².

The invention also provides a photosensitizing material for an optoelectronic device comprising a mixed-anion perovskite wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The perovskite is a perovskite as defined herein.

The optoelectronic device of the invention may further comprise encapsulated metal nanoparticles. For instance, the optoelectronic device of the invention may further comprise encapsulated metal nanoparticles disposed between the first and second electrodes.

The mixed-anion perovskites used in the devices of the invention, i.e., the perovskites which comprise two or more different anions selected from halide anions and chalcogenide anions, can be produced by a process comprising mixing:

(a) a first compound comprising (i) a first cation and (ii) a first anion; with

(b) a second compound comprising (i) a second cation and (ii) a second anion,

wherein:

the first and second cations are as herein defined; and

the first and second anions are different anions selected from halide anions and chalcogenide anions. Typically, the first and second anions are different anions selected from halide anions.

Alternatively the process may comprising (1) treating: (a) a first compound comprising (i) a first cation and (ii) a first anion; with (b) a second compound comprising (i) a second cation and (ii) a first anion, to produce a first product, wherein: the first and second cations are as herein defined; and the first anion is selected from halide anions and chalcogenide anions; and (2) treating (a) a first compound comprising (i) a first cation and (ii) a second anion; with (b) a second compound comprising (i) a second cation and (ii) a second anion, to produce a second product, wherein: the first and second cations are as herein defined; and the second anion is selected from halide anions and chalcogenide anions. Usually, the first and second anions are different anions selected from halide anions and chalcogenide anions. Typically, the first and second anions are different anions selected from halide anions. The process usually further comprises treating a first amount of the first product with a second amount of the second product, wherein the first and second amounts may be the same or different.

The mixed-anion perovskite produced by the process may comprise further cations or further anions. For example, the mixed-anion perovskite may comprise two, three or four different cations, or two, three of four different anions. The process for producing the mixed-anion perovskite may therefore comprise mixing further compounds comprising a further cation or a further anion. Additionally or alternatively, the process for producing the mixed-anion perovskite may comprise mixing (a) and (b) with: (c) a third compound comprising (i) the first cation and (ii) the second anion; or (d) a fourth compound comprising (i) the second cation and (ii) the first anion.

Typically, in the process for producing the mixed-anion perovskite, the second cation in the mixed-anion perovskite is a metal cation. More typically, the second cation is a divalent metal cation. For instance, the first cation may be selected from Ca²⁺, Sr²⁺, Cd²⁺, Cu²⁺, Ni²⁺, Mn²⁺, Fe²⁺, Co²⁺, Pd²⁺, Ge²⁺, Pb²⁺, Sn²⁺, Y²⁺ and Eu²⁺. Usually, the second cation is selected from Sn²⁺ and Pb²⁺.

Often, in the process for producing the mixed-anion perovskite, the first cation in the mixed-anion perovskite is an organic cation.

Usually, the organic cation has the formula (R₁R₂R₃R₄N)⁺, wherein:

R₁ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl;

R₂ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl;

R₃ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; and

R₄ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl.

Mainly, in the organic cation, R₁ is hydrogen, methyl or ethyl, R₂ is hydrogen, methyl or ethyl, R₃ is hydrogen, methyl or ethyl, and R₄ is hydrogen, methyl or ethyl. For instance R₁ may be hydrogen or methyl, R₂ may be hydrogen or methyl, R₃ may be hydrogen or methyl, and R₄ may be hydrogen or methyl.

Alternatively, the organic cation may have the formula (R₅NH₃)⁺, wherein: R₅ is hydrogen, or unsubstituted or substituted C₁-C₂₀ alkyl. For instance, R₅ may be methyl or ethyl. Typically, R₅ is methyl.

In another embodiment, the organic cation has the formula (R₅R₆N═CH—NR₇R₈)⁺, wherein: R₅ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; R₆ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; R₇ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; and R₈ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl. The organic cation may, for instance, be (R₅R₆N═CH—NR₇R₈)⁺, wherein: R₅, R₆, R₇ and R₈ are independently selected from hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, and unsubstituted or substituted aryl. For instance, the organic cation may be (H₂N═CH—NH₂)⁺.

In the process for producing the mixed-anion perovskite, the perovskite is usually a mixed-halide perovskite, wherein said two or more different anions are two or more different halide anions.

Typically, in the process for producing the mixed-anion perovskite, the perovskite is a perovskite compound of the formula (I):

[A][B][X]₃  (I)

wherein:

[A] is at least one organic cation;

[B] is at least one metal cation; and

[X] is said two or more different anions; and the process comprises mixing:

(a) a first compound comprising (i) a metal cation and (ii) a first anion; with

(b) a second compound comprising (i) an organic cation and (ii) a second anion,

wherein:

the first and second anions are different anions selected from halide anions or chalcogenide anions.

The perovskite of the formula (I) may, for instance, comprise one, two, three or four different metal cations, typically one or two different metal cations. The perovskite of the formula (I), may, for instance, comprise one, two, three or four different organic cations, typically one or two different organic cations. The perovskite of the formula (I), may, for instance, comprise two, three or four different anions, typically two or three different anions. The process may, therefore, comprising mixing further compounds comprising a cation and an anion.

Typically, [X] is two or more different halide anions. The first and second anions are thus typically halide anions. Alternatively, [X] may be three different halide ions. Thus the process may comprise mixing a third compound with the first and second compound, wherein the third compound comprises (i) a cation and (ii) a third halide anion, where the third anion is a different halide anion from the first and second halide anions.

Often, in the process for producing the mixed-anion perovskite, the perovskite is a perovskite compound of the formula (IA):

AB[X]₃  (IA)

wherein:

A is an organic cation;

B is a metal cation; and

[X] is said two or more different anions.

the process comprises mixing:

(a) a first compound comprising (i) a metal cation and (ii) a first halide anion; with

(b) a second compound comprising (i) an organic cation and (ii) a second halide anion:

wherein:

the first and second halide anions are different halide anions.

Usually, [X] is two or more different halide anions. Preferably, [X] is two or three different halide anions. More preferably, [X] is two different halide anions. In another embodiment [X] is three different halide anions.

Typically, in the process for producing the mixed-anion perovskite, the perovskite is a perovskite compound of formula (II):

ABX_(3−y)X′_(y)  (II)

wherein:

A is an organic cation;

B is a metal cation;

X is a first halide anion;

X′ is a second halide anion which is different from the first halide anion; and

y is from 0.05 to 2.95; and

the process comprises mixing:

(a) a first compound comprising (i) a metal cation and (ii) X; with

(b) a second compound comprising (i) an organic cation and (ii) X′:

wherein X′ is different from X; and wherein the ratio of X to X′ in the mixture is equal to (3−y):y.

In order to achieve said ratio of X to X′ equal to (3−y):y, the process may comprise mixing a further compound with the first and second compounds. For example, the process may comprise mixing a third compound with the first and second compounds, wherein the third compound comprises (i) the metal cation and (ii) X′. Alternative, the process may comprising mixing a third compound with the first and second compounds, wherein the third compound comprises (i) the organic cation and (ii) X.

Usually, y is from 0.5 to 2.5, for instance from 0.75 to 2.25. Typically, y is from 1 to 2.

Typically, in the process for producing the mixed-anion perovskite, the first compound is BX₂ and the second compound is AX′.

Often the second compound is produce by reacting a compound of the formula (R₅NH₂), wherein: R₅ is hydrogen, or unsubstituted or substituted C₁-C₂₀ alkyl, with a compound of formula HX′. Typically, R₅ may be methyl or ethyl, often R₅ is methyl.

Usually, the compound of formula (R₅NH₂) and the compound of formula HX′ are reacted in a 1:1 molar ratio. Often, the reaction takes place under nitrogen atmosphere and usually in anhydrous ethanol. Typically, the anhydrous ethanol is about 200 proof. More typically from 15 to 30 ml of the compound of formula (R₅NH₂) is reacted with about 15 to 15 ml of HX′, usually under nitrogen atmosphere in from 50 to 150 ml anhydrous ethanol. The process may also comprise a step of recovering said mixed-anion perovskite. A rotary evaporator is often used to extract crystalline AX′.

Usually, the step of mixing the first and second compounds is a step of dissolving the first and second compounds in a solvent. The first and second compounds may be dissolved in a ratio of from 1:20 to 20:1, typically a ratio of 1:1. Typically the solvent is dimethylformamide (DMF) or water. When the metal cation is Pb²⁺ the solvent is usually dimethylformamide. When the metal cation is Sn²⁺ the solvent is usually water. The use of DMF or water as the solvent is advantageous as these solvents are not very volatile.

Often, in the process for producing the mixed-anion perovskite, [B] is a single metal cation which is Pb²⁺, one of said two or more different halide anions is iodide or fluoride; and when [B] is a single metal cation which is Sn²⁺ one of said two or more different halide anions is fluoride.

Typically, in the process for producing the mixed-anion perovskite X or X′ is iodide. Alternatively, X or X′ is fluoride.

Often, in the process for producing the mixed-anion perovskite, the perovskite is a perovskite selected from CH₃NH₃PbBrI₂, CH₃NH₃PbBrCl₂, CH₃NH₃PbIBr₂, CH₃NH₃PbICl₂, CH₃NH₃PbClBr₂, CH₃NH₃PbI₂Cl, CH₃NH₃SnBrI₂, CH₃NH₃SnBrCl₂, CH₃NH₃SnF₂Br, CH₃NH₃SnIBr₂, CH₃NH₃SnICl₂, CH₃NH₃SnF₂I, CH₃NH₃SnClBr₂, CH₃NH₃SnI₂Cl and CH₃NH₃SnF₂Cl. Typically, the perovskite is selected from CH₃NH₃PbBrI₂, CH₃NH₃PbBrCl₂, CH₃NH₃PbIBr₂, CH₃NH₃PbICl₂, CH₃NH₃PbClBr₂, CH₃NH₃PbI₂Cl, CH₃NH₃SnF₂Br, CH₃NH₃SnICl₂, CH₃NH₃SnF₂I, CH₃NH₃SnI₂Cl and CH₃NH₃SnF₂Cl. More typically, the perovskite is selected from CH₃NH₃PbBrI₂, CH₃NH₃PbBrCl₂, CH₃NH₃PbIBr₂, CH₃NH₃PbICl₂, CH₃NH₃PbClBr₂, CH₃NH₃PbI₂Cl, CH₃NH₃SnF₂Br, CH₃NH₃SnF₂I and CH₃NH₃SnF₂Cl. Usually, the perovskite is selected from CH₃NH₃PbBrI₂, CH₃NH₃PbBrCl₂, CH₃NH₃PbIBr₂, CH₃NH₃PbICl₂, CH₃NH₃SnF₂Br, and CH₃NH₃SnF₂I.

In some embodiments, in the process for producing the mixed-anion perovskite, the perovskite is a perovskite compound of formula (IIa):

ABX_(3z)X′_(3(1−z))  (IIa)

wherein:

A is an organic cation of the formula (R₅R₆N═CH—NR₇R₈)⁺, wherein: (i) R₅ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; (ii) R₆ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; (iii) R₇ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; and (iv) R₈ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl;

B is a metal cation selected from Sn²⁺ and Pb²⁺;

X is a first halide anion;

X′ is a second halide anion which is different from the first halide anion; and

z is greater than 0 and less than 1;

and the process comprises: (1) treating: (a) a first compound comprising (i) the metal cation and (ii) X, with (b) a second compound comprising (i) the organic cation and (ii) X, to produce a first product; (2) treating: (a) a first compound comprising (i) the metal cation and (ii) X′, with (b) a second compound comprising (i) the organic cation and (ii) X′, to produce a second product; and (3) treating a first amount of the first product with a second amount of the second product, wherein the first and second amounts may be the same or different.

Usually z is from 0.05 to 0.95. z may be as further defined hereinbefore.

In the process for producing a mixed-anion perovskite, the perovskite may, for instance, have the formula (H₂N═CH—NH₂)PbI_(3z)Br_(3(1−z)), wherein z is as defined hereinabove.

The process for producing an optoelectronic device is usually a process for producing a device selected from: a photovoltaic device; a photodiode; a phototransistor; a photomultiplier; a photo resistor; a photo detector; a light-sensitive detector; solid-state triode; a battery electrode; a light-emitting device; a light-emitting diode; a transistor; a solar cell; a laser; and a diode injection laser. Typically, the optoelectronic device is a photovoltaic device.

Usually, the process for producing an optoelectronic device is usually a process for producing a photovoltaic device. More usually, the device is a solar cell.

Alternatively, process for producing an optoelectronic device may be a process for producing a light-emitting device, for instance a light-emitting diode.

The process for producing an optoelectronic device, wherein the optoelectronic device comprises:

a first electrode;

a second electrode; and, disposed between the first and second electrodes:

(a) said perovskite.

is usually a process comprising:

(i) providing a first electrode;

(ii) depositing said perovskite; and

(iii) providing a second electrode.

As the skilled person will appreciate, the process for producing an optoelectronic device will vary depending on the optoelectronic device being made, and in particular depending upon the different components of the device. The process which is discusses below and exemplified is a process for producing an optoelectronic device which comprises: a first electrode; a second electrode; and, disposed between the first and second electrodes: (a) an n-type layer; (b) said perovskite; and (c) a p-type layer. However, as the skilled person will appreciate, the same process may be used to produce other devices of the invention, having different components and different layer structures. These include, for instance, optoelectronic devices of the invention which comprise: a first electrode; a second electrode; and, disposed between the first and second electrodes: (a) a thin film comprising said perovskite. Also, the process described herein can be used to produce optoelectronic devices comprising: a first electrode; a second electrode; and, disposed between the first and second electrodes: (a) a layer of a semiconductor; and (b) said perovskite, or optoelectronic devices comprising: a first electrode; a second electrode; and, disposed between the first and second electrodes: (a) an n-type layer; and (b) said perovskite, or optoelectronic devices may comprising: a first electrode; a second electrode; and, disposed between the first and second electrodes: (a) a p-type layer; and (b) said perovskite.

The process for producing an optoelectronic device, wherein the optoelectronic device comprises:

a first electrode;

a second electrode; and, disposed between the first and second electrodes:

(a) an n-type layer;

(b) said perovskite; and

(c) a p-type layer;

is usually a process comprising:

(i) providing a first electrode;

(ii) depositing a layer of an n-type material;

(iii) depositing said perovskite;

(iv) depositing a layer of of p-type material; and

(v) providing a second electrode.

The first and second electrodes are an anode and a cathode, one or both of which is transparent to allow the ingress of light. The choice of the first and second electrodes of the optoelectronic devices of the present invention may depend on the structure type. Typically, the n-type layer is deposited onto a tin oxide, more typically onto a fluorine-doped tin oxide (FTO) anode, which is usually a transparent or semi-transparent material. Thus, the first electrode is usually transparent or semi-transparent and typically comprises FTO. Usually, the thickness of the first electrode is from 200 nm to 600 nm, more usually, from 300 to 500 nm. For example the thickness may be 400 nm. Typically, FTO is coated onto a glass sheet. Often, the TFO coated glass sheets are etched with zinc powder and an acid to produce the required electrode pattern. Usually the acid is HCl. Often the concentration of the HCl is about 2 molar. Typically, the sheets are cleaned and then usually treated under oxygen plasma to remove any organic residues. Usually, the treatment under oxygen plasma is for less than or equal to 1 hour, typically about 5 minutes.

Usually, the second electrode comprises a high work function metal, for instance gold, silver, nickel, palladium or platinum, and typically silver. Usually, the thickness of the second electrode is from 50 nm to 250 nm, more usually from 100 nm to 200 nm. For example, the thickness of the second electrode may be 150 nm.

Usually, the n-type layer comprises a metal oxide semiconductor and the p-type layer comprises a hole transporting material. The metal oxide semiconductor and the hole transporting material are as herein defined.

Alternatively, the p-type layer comprises a metal oxide semiconductor and the n-type layer comprises an electron transporting material. For instance, the metal oxide semiconductor may comprise an oxide of nickel, molybdenum, copper or vanadium, or a mixture thereof. Often, the electron transporting material comprises a fullerene or perylene, or derivatives thereof, or P(NDI2OD-T2)). For instance, the electron transporting material may be P(NDI2OD-T2).

In one embodiment, the optoelectronic device may be a thin film device. Usually, the n-type layer will comprise a metal oxide, sulphide, selenide or telluride. Often, the metal oxide will be oxide an oxide of titanium, tin, zinc, niobium, tantalum, tungsten, indium, gallium, neodinium, palladium or cadmium, or a mixture thereof. For instance, the n-type layer may comprise TiO₂, SnO₂, ZnO, Nb₂O₅, Ta₂O₅, WO₃, W₂O₅, In₂O₃, Ga₂O₃, Nd₂O₃, PbO, or CdO. Often, the metal oxide is TiO₂. Typically, the sulphide will be a sulphide of cadmium, tin, copper, zinc or a mixture thereof. For instance, the sulphide may be FeS₂, CdS or Cu₂ZnSnS₄. Usually, the selenide will be a selenide of cadmium, zinc, indium or gallium or a mixture thereof. For instance, the selenide may be Cu(In,Ga)Se₂. Typically, the tellenide is a tellenide of cadmium, zinc, cadmium or tin. For instance, the tellenide may be CdTe.

The optoelectronic device may comprise a tunnel junction. For instance, the optoelectronic device may be a multi junction solar cell or tandem cell.

In one embodiment of the process for producing the photovoltaic device, the device comprising:

a first electrode;

a second electrode; and, disposed between the first and second electrodes:

(a) a porous layer of a semiconductor;

(b) a sensitizer material comprising said perovskite; and

(c) a charge transporting material; and

the process comprises:

(i) providing a first electrode;

(ii) depositing a porous layer of a semiconductor;

(iii) depositing a sensitizer comprising said perovskite;

(iv) depositing a charge transporting material; and

(v) providing a second electrode.

Usually, the porous layer of a semiconductor comprises an oxide of titanium, aluminium, tin, zinc or magnesium. The porous layer may comprise a mixture of oxides of titanium, aluminium, tin, zinc or magnesium. Typically, the porous layer comprises oxide an oxide of titanium, tin, zinc, niobium, tantalum, tungsten, indium, gallium, neodinium, palladium or cadmium, or a mixture thereof. For instance, the layer may comprise TiO₂, SnO₂, ZnO, Nb₂O₅, Ta₂O₅, WO₃, W₂O₅, In₂O₃, Ga₂O₃, Nd₂O₃, PbO, or CdO. Typically, the porous layer of a semiconductor comprises TiO₂. More typically, the porous layer of a semiconductor comprises mesoporous TiO₂.

A metal oxide paste is typically used to produce the porous layer of metal oxide. More typically, TiO₂ nanoparticle paste is used. The deposition of the porous layer of a semiconductor usually comprises a step doctor-blade coating, screen printing or spin-coating the paste. The porous layer of a semiconductor is usually has a thickness of from 50 nm to 3 μm, for instance the thickness may be from 200 nm to 2 μm. Often, the thickness of the layer may be 0.6 μm. Usually, in the step of depositing a porous layer of an n-type semiconductor, the layer is heated to a first temperature of from 400 to 600° C., typically to a temperature of about 500° C. The temperature of the porous layer of a semiconductor is ramped up slowly to the first temperature, typically over a period of time of from 15 to 45 minutes, typically over about 30 minute.

Typically, the step of depositing a porous layer of a semiconductor further comprises a step of surface treating the layer of an a semiconductor. The surface treatment step may be used to improve the packing of said sensitizer of the layer of a semiconductor. Additionally or alternatively, the surface treatment step may be to provide a blocking layer between said sensitizer of the layer of a semiconductor. A self-assembled monolayer of C₆₀ may be used as said blocking layer. Often, the compositions used in the surface treatment step may be selected from C₆₀, a metal chloride, a metal oxide, a dye and CDCA. The metal oxide, may, for instance, be selected from MgO, SiO₂, NiO and Al₂O₃. Often, the metal chloride has the formula MY₄, wherein M is a metal cation, typically Ti⁴⁺ and X is a halide anion, typically chloride. Usually, the layer of a semiconductor is placed in a solution of the metal chloride. Often, the solution is a solution of from 0.005 to 0.03 M of aqueous solution of TiCl₄. More often, the solution is a solution of about 0.015 M of aqueous solution of TiCl₄. Usually, the layer of an n-type semiconductor is placed in the solution for from 30 minutes to 2 hours, typically for about 1 hour. Usually, the solution is at a first temperature of from 50 to 100° C., usually about 70° C. Often, after the layer of a semiconductor has been placed in a solution of formula MY₄, the layer is washed, typically with deionised water. The layer of a semiconductor may then be dried in air and/or heated to a second temperature of at least 500° C., typically to a second temperature of from 500 to 600° C. For instance, the layer of a semiconductor may be heated to a second temperature of about 500° C. The layer of an n-type semiconductor may be left to dwell at the second temperature for a period of at least 30 minutes. Typically the dwell time is from 30 minutes to 2 hours, usually about 45 minutes. Often, when the layer of a semiconductor is at the second temperature, the layer is exposed to a flow of air. Usually, the layer of a semiconductor is then cooled to a third temperature of from 50 to 150° C., typically a third temperature of about 70° C. Usually, the layer of a semiconductor is then left is a dye solution for a period of from 5 hours to 24 hours, typically a period of about 12 hours.

The layer of a semiconductor is typically deposited onto a compact layer of a semiconductor. Usually, the compact layer of a semiconductor comprises an oxide of titanium, tin, zinc, niobium, tantalum, tungsten, indium, gallium, neodinium, palladium or cadmium, or a mixture thereof. For instance, the layer may comprise TiO₂, SnO₂, ZnO, Nb₂O₅, Ta₂O₅, WO₃, W₂O₅, In₂O₃, Ga₂O₃, Nd₂O₃, PbO, or CdO. Typically, the compact layer of a semiconductor comprises TiO₂. Often, the compact layer is deposited on the first electrode. The process for producing the photovoltaic device thus usually comprise a step of depositing a compact layer of a semiconductor.

The step of depositing a compact layer of a semiconductor may, for instance, comprise depositing the compact layer of a semiconductor by aerosol spray pyrolysis deposition. Typically, the aerosol spray pyrolysis deposition comprises deposition of a solution comprising titanium diisopropoxide bis(acetylacetonate), usually at a temperature of from 200 to 300° C., often at a temperature of about 250° C. Usually the solution comprises titanium diisopropoxide bis(acetylacetonate) and ethanol, typically in a ratio of from 1:5 to 1:20, more typically in a ratio of about 1:10.

Often, the step of depositing a compact layer of a semiconductor is a step of depositing a compact layer of a semiconductor of thickness from 50 nm to 200 nm, typically a thickness of about 100 nm.

In the step of depositing a sensitizer comprising said perovskite, said perovskite is a perovskite as described herein. The step of depositing a sensitizer comprising said perovskite usually comprises depositing the sensitizer on the porous layer of a semiconductor. Often, the step of depositing a sensitizer comprising said perovskite comprises spin coating said perovskite. The spin coating usually occurs in air, typically at a speed of from 1000 to 2000 rpm, more typically at a speed of about 1500 rpm and/or often for a period of from 15 to 60 seconds, usually for about 30 seconds. The sensitizer is usually placed in a solvent prior to the spin coating. Usually the solvent is DMF and typically the volume of solution used id from 1 to 200 μl, more typically from 20 to 100 μl. The concentration of the solution is often of from 1 to 50 vol % perovskite, usually from 5 to 40 vol %. The solution may be, for instance, dispensed onto the layer of a porous layer of a semiconductor prior to said spin coating and left for a period of about 5 to 50 second, typically about 20 seconds. After spin coating the sensitizer the layer of a sensitizer comprising said perovskite is typically placed at a temperature of from 75 to 125° C., more typically a temperature of about 100° C. The layer of a sensitizer comprising said perovskite is then usually left at this temperature for a period of at least 30 minutes, more usually a period of from 30 to 60 minutes. Often, the layer of a sensitizer comprising said perovskite is left at this temperature for a period of about 45 minutes. Typically, the layer of a sensitizer comprising said perovskite will change colour, for example from light yellow to dark brown. The colour change may be used to indicate the formation of the desired sensitizer layer.

Usually, the perovskite is said sensitizer does not decompose when exposed to oxygen or moisture for a period of time equal to or greater than 10 minutes. Typically, the perovskite does not decompose when exposed to oxygen or moisture for a period of time equal to or greater than 24 hours.

Often the step of depositing a sensitizer comprising said perovskite, may comprise depositing said perovskite and a single-anion perovskite, wherein said single anion perovskite comprises a first cation, a second cation and an anion selected from halide anions and chalcogenide anions; wherein the first and second cations are as herein defined for said mixed-anion perovskite. For instance, the sensitizer may comprise: CH₃NH₃PbICl₂ and CH₃NH₃PbI₃; CH₃NH₃PbICl₂ and CH₃NH₃PbBr₃; CH₃NH₃PbBrCl₂ and CH₃NH₃PbI₃; or CH₃NH₃PbBrCl₂ and CH₃NH₃PbBr₃.

Alternatively, the step of depositing a sensitizer comprising said perovskite, may comprise depositing more than one perovskite, wherein each perovskite is a mixed-anion perovskite, and wherein said mixed-anion perovskite is as herein defined. For instance, the sensitizer may comprise two or three said perovskites. The sensitizer may comprise two perovskites wherein both perovskites are mixed-anion perovskites. For instance, the sensitizer may comprise: CH₃NH₃PbICl₂ and CH₃NH₃PbIBr₂; CH₃NH₃PbICl₂ and CH₃NH₃PbBrI₂; CH₃NH₃PbBrCl₂ and CH₃NH₃PbIBr₂; or CH₃NH₃PbBrCl₂ and CH₃NH₃PbIBr₂.

As a further alternative, the step of depositing a sensitizer comprising said perovskite, may comprise depositing at least one perovskite, for instance, at least one perovskite having the formula (H₂N═CH—NH₂)PbI_(3z)Br_(3(1−z)).

The step of depositing a charge transporting material usually comprises depositing a charge transporting material that is a solid state hole transporting material or a liquid electrolyte. The hole transporting material in the optoelectronic device of the invention may be any suitable n-type or electron transporting, semiconducting material, or any p-type or hole-transporting, semiconducting material.

When the charge transporting material is an electron transporting material, the charge transporting material may comprise a fullerene or perylene, or derivatives thereof, poly {[N,N0-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,50-(2,20-bithiophene)} (P(NDI2OD-T2)), or an electrolyte.

When the charge transporting material is an hole transporting material, the hole transporting material in the optoelectronic device of the invention may be a small molecular or polymer-based hole conductor.

Typically, when the charge transporting material is an hole transporting material, the charge transporting material is a solid state hole transporting material or a liquid electrolyte.

Often, when the charge transporting material is an hole transporting material, the charge transporting material is a polymeric or molecular hole transporter. Typically, the hole transporting material comprises spiro-OMeTAD (2,2′,7,7′-tetrakis-(N,N-di-p-methoxyphenylamine)9,9′-spirobifluorene)), P3HT (poly(3-hexylthiophene)), PCPDTBT (Poly[2,1,3-benzothiadiazole-4,7-diyl[4,4-bis(2-ethylhexyl)-4H-cyclopenta[2,1-b:3,4-b′]dithiophene-2,6-diyl]]), PVK (poly(N-vinylcarbazole)), HTM-TFSI (1-hexyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide), Li-TFSI (lithium bis(trifluoromethanesulfonyl)imide) or tBP (tert-butylpyridine). Usually, the hole transporting material is selected from spiro-OMeTAD, P3HT, PCPDTBT and PVK. Preferable, the hole transporting material is spiro-OMeTAD.

When the charge transporting material is an hole transporting material, the charge transporting material may, for instance, be a molecular hole transporter, or a polymer or copolymers. Often, the charge transporting material is a molecular hole transporting material, a polymer or copolymer comprises one or more of the following moieties: thiophenyl, phenelenyl, dithiazolyl, benzothiazolyl, diketopyrrolopyrrolyl, ethoxydithiophenyl, amino, triphenyl amino, carbozolyl, ethylene dioxythiophenyl, dioxythiophenyl, or fluorenyl.

Alternatively, when the charge transporting material is an hole transporting material, the charge transporting material may be an inorganic hole transporter, for instance, CuI, CuBr, CuSCN, Cu₂O, CuO or CIS.

Prior to the step of depositing a charge transporting material, the charge transporting material is often dissolved in a solvent, typically chlorobenzene. Usually the concentration of cholorbenzene is from 150 to 225 mg/ml, more usually the concentration is about 180 mg/ml. Typically, the charge transporting material is dissolved in the solvent at a temperature of from 75 to 125° C., more typically at a temperature of about 100° C. Usually the charge transporting material is dissolved for a period of from 25 minutes to 60 minutes, more usually a period of about 30 minutes. An additive may be added to the charge transporting material. The additive may be, for instance, tBP, Li-TFSi, an ionic liquid or an ionic liquid with a mixed halide(s).

Usually, the charge transporting material is spiro-OMeTAD. Often, tBP is also added to the charge transporting material prior to the step of depositing a charge transporting material. For instance, tBP may be added in a volume to mass ratio of from 1:20 to 1:30 μl/mg tBP:spiro-OMeTAD. Typically, tBP may be added in a volume to mass ratio of 1:26 μl/mg tBP:spiro-OMeTAD. Additionally or alternatively, Li-TFSi may be added to the hole transporting material prior to the step of depositing a charge transporting material. For instance, Li-TFSi may be added at a ratio of from 1:5 to 1:20 μl/mg Li-TFSi:spiro-OMeTAD. Usually Li-TFSi may be added at a ratio of 1:12 μl/mg Li-TFSi:spiro-OMeTAD.

The step of depositing a charge transporting material often comprises spin coating a solution comprising the charge transporting material onto the sensitizer material comprising said perovskite. Usually, prior to spin coating, a small quantity of the solution comprising the charge transporting material is deposited onto the sensitizer comprising said perovskite. The small quantity is usually from 5 to 100 μl, more usually from 20 to 70 μl. The solution comprising the charge transporting material is typically left for a period of at least 5 seconds, more typically a period of from 5 to 60 seconds, prior to spin coating. For instance, the solution comprising the charge transporting material be left for a period of about 20 seconds prior to spin coating. The spin coating of the charge transporting material is usually carried out at from 500 to 3000 rpm, typically at about 1500 rpm. The spin coating is often carried our for from 10 to 40 seconds in air, more often for about 25 seconds.

The step of producing a second electrode usually comprises a step of depositing the second electrode on to the charge transporting material. Typically, the second electrode is an electrode comprising silver. Often, the step of producing a second electrode comprises placing a film comprising the charge transporting material in a thermal evaporator. Usually, the step of producing a second electrode comprises deposition of the second electrode through a shadow mask under a high vacuum. Typically, the vacuum is about 10⁻⁶ mBar. The second electrode may, for example, be an electrode of a thickness from 100 to 300 nm. Typically, the second electrode is an electrode of a thickness from 200 nm.

Typically, the distance between the second electrode and the porous layer of a semiconductor is from 50 nm to 400 nm, more typically from 150 nm to 250 nm. Often, the distance between the second electrode and the porous layer of a semiconductor is around 200 nm.

Often, the process for producing an the optoelectronic device of the invention is a process for producing a photovoltaic device, wherein the AM1.5G 100 mWcm⁻² power conversion efficiency of the photovoltaic device is equal to or greater than 7.3%. Typically, the AM1.5G 100 mWcm⁻² power conversion efficiency is equal to or greater than 11.5%.

Typically, the process for producing an the optoelectronic device of the invention is a process for producing a photovoltaic device, wherein the photocurrent of the photovoltaic device is equal to or greater than 15 mAcm⁻². More typically, the photocurrent is equal to or greater than 20 mAcm⁻².

The invention will be described further in the Examples which follow.

EXAMPLES Experimental Description 1. Synthesis of Organometal Halide Perovskites: 1.1. Preparation of Methylammonium Iodide Precursor

Methylamine (CH₃NH₂) solution 33 wt. % in absolute ethanol (Sigma-Aldrich) was reacted with hydriodic acid 57 wt. % in water (Sigma-Aldrich) at 1:1 molar ratio under nitrogen atmosphere in anhydrous ethanol 200 proof (Sigma-Aldrich). Typical quantities were 24 ml methylamine, 10 ml hydroiodic acid and 100 ml ethanol. Crystallisation of methylammonium iodide (CHNH₃I) was achieved using a rotary evaporator a white coloured precipitate was formed indicating successful crystallisation.

The methylamine can be substituted for other amines, such as ethylamine, n-butylamine, tert-butylamine, octylamine etc. in order to alter the subsequent perovskite properties. In addition, the hydriodic acid can be substituted with other acids to form different perovskites, such as hydrochloric acid.

1.2. Preparation of Methylammonium Iodide Lead (II) Chloride (CH₃NH₃PbCl₂I) Perovskite Solution

Methylammonium iodide (CHNH₃I) precipitate and lead (II) chloride (Sigma-Aldrich) was dissolved in dimethylformamide (C₃H₇NO) (Sigma-Aldrich) at 1:1 molar ratio at 20 vol. %.

For making different perovskites, different precursors, such as different lead(II)halides or indeed different metals halides all together, such as Sn iodide.

1.3. Generalising the organometal halide perovskite structure

The perovskite structure is defined as ABX₃, where A=cation (0,0,0)—ammonium ion, B=cation (½, ½, ½)—divalent metal ion, and X=anion (½, ½, 0)—halogen ion. The table below indicates possible mixed-anion peroskites.

Fixing: [A] = Methylammonium, [B] = Pb, varying [χ] = any halogen Perovskite Methylammonium-[X] Lead halide (Pb[X]₂) CH₃NH₃PbBr₃ CH₃NH₃Br PbBr₂ CH₃NH₃PbBrI₂ CH₃NH₃Br PbI₂ CH₃NH₃PbBrCI₂ CH₃NH₃Br PbCl₂ CH₃NH₃PbIBr₂ CH₃NH₃I PbBr₂ CH₃NH₃PbI₃ CH₃NH₃I PbI₂ CH₃NH₃PbICl₂ CH₃NH₃I PbCl₂ CH₃NH₃PbCIBr₂ CH₃NH₃Cl PbBr₂ CH₃NH₃PbI₂Cl CH₃NH₃Cl PbI₂ CH₃NH₃PbCl₃ CH₃NH₃Cl PbCl₂

Fixing: [A] = Methylammonium, [B] = Sn, varying [X] = any halogen Perovskite Methylammonium-[X] Tin halide (Sn[X]₂) CH₃NH₃SnBr₃ CH₃NH₃Br SnBr₂ CH₃NH₃SnBrI₂ CH₃NH₃Br SnI₂ CH₃NH₃SnBrCI₂ CH₃NH₃Br SnCl₂ CH₃NH₃SnF₂Br CH₃NH₃Br SnF₂ CH₃NH₃SnIBr₂ CH₃NH₃I SnBr₂ CH₃NH₃SnI₃ CH₃NH₃I SnI₂ CH₃NH₃ISnICl₂ CH₃NH₃I SnCl₂ CH₃NH₃SnF₂l CH₃NH₃l SnF₂ CH₃NH₃SnCIBr₂ CH₃NH₃Cl SnBr₂ CH₃NH₃SnI₂Cl CH₃NH₃Cl SnI₂ CH₃NH₃SnCl₃ CH₃NH₃Cl SnCl₂ CH₃NH₃SnF₂Cl CH₃NH₃Cl SnF₂

[A] may be varied using different organic elements, for example as in Liang et al., U.S. Pat. No. 5,882,548, (1999) and Mitzi et al., U.S. Pat. No. 6,429,318, (2002).

1.4 Blended Perovskites

Perovksite 1 Perovskite 2 Outcome CH₃NH₃PbICl₂ CH₃NH₃PbIBr₂ Red CH₃NH₃PbICl₂ CH₃NH₃PbBrI₂ Yellow CH₃NH₃PbICl₂ CH₃NH₃PbI₃ Dark brown CH₃NH₃PbICl₂ CH₃NH₃PbBr₃ Yellow

Perovksite 1 Perovskite 2 Outcome CH₃NH₃PbBrCl₂ CH₃NH₃PbIBr₂ Yellow CH₃NH₃PbBrCl₂ CH₃NH₃PbBrI₂ Yellow CH₃NH₃PbBrCl₂ CH₃NH₃PbI₃ Brown CH₃NH₃PbBrCl₂ CH₃NH₃PbBr₃ Yellow

1.5 Stability of Mixed-Halide Perovskites Against Single-Halide Perovskites

The inventors have found that photovoltaic devices comprising a mixed-halide perovskite do absorb light and operate as solar cells. When fabricating films from the single halide perovskites in ambient conditions. The perovskites form, but quickly bleach in colour. This bleaching is likely to be due to the adsorption of water on to the perovskite surface, which is know to bleach the materials. When the complete solar cells are constructed in ambient conditions using these single hailde perovskites, they perform very poorly with full sun light power conversion efficiencies of under 1%. In contrast, the mixed halide perovskites can be processed in air, and show negligible colour bleaching during the device fabrication process. The complete solar cell incorporating the mixed halide perovskites perform exceptionally well in ambient conditions, with full sun power conversion efficiency of over 10%.

1.6 Preparation of Perovskites Comprising a Formamidinium Cation

Formamidinium iodide (FOI) and formamidinium bromide (FOBr) were synthesised by reacting a 0.5M molar solution of formamidinium acetate in ethanol with a 3× molar excess of hydroiodic acid (for FOI) or hydrobromic acid (for FOBr). The acid was added dropwise whilst stirring at room temperature, then left stirring for another 10 minutes. Upon drying at 100° C., a yellow-white powder is formed, which is then dried overnight in a vacuum oven before use. To form FOPbI₃ and FOPbBr₃ precursor solutions, FOI and PbI₂ or FOBr and PbBr₂ were dissolved in anhydrous N,N-dimethylformamide in a 1:1 molar ratio, 0.88 millimoles of each per ml, to give 0.88M perovskite solutions. To form the FOPbI_(3z)Br_(3(1−z)) perovskite precursors, mixtures were made of the FOPbI₃ and FOPbBr₃ 0.88 M solutions in the required ratios, where z ranges from 0 to 1.

Films for characterisation or device fabrication were spin-coated in a nitrogen-filled glovebox, and annealed at 170° C. for 25 minutes in the nitrogen atmosphere.

2. Cleaning and Etching of the Electrodes:

The perovskite solar cells used and presented in these examples were fabricated as follows: Fluorine doped tin oxide (F:SnO₂/FTO) coated glass sheets (TEC 15, 15Ω/square, Pilkington USA) were etched with zinc powder and HCl (2 M) to give the required electrode pattern. The sheets were subsequently cleaned with soap (2% Hellemanex in water), distilled water, acetone, ethanol and finally treated under oxygen plasma for 5 minutes to remove any organic residues.

3. Deposition of the Compact TiO₂ Layer:

The patterned FTO sheets were then coated with a compact layer of TiO₂ (100 nm) by aerosol spray pyrolysis deposition of a titanium diisopropoxide bis(acetylacetonate) ethanol solution (1:10 titanium diisopropoxide bis(acetylacetonate) to ethanol volume ratio) at 250° C. using air as the carrier gas (see Kavan, L. and Gratzel, M., Highly efficient semiconducting TiO₂ photoelectrodes prepared by aerosol pyrolysis, Electrochim. Acta 40, 643 (1995); Snaith, H. J. and Gratzel, M., The Role of a “Schottky Barrier” at an Electron-Collection Electrode in Solid-State Dye-Sensitized Solar Cells. Adv. Mater. 18, 1910 (2006)).

4. Deposition of the Mesoporous TiO₂ Film:

A standard TiO₂ nanoparticle paste, such as commercially available dyesol 18NR-T, was doctor-blade coated, screen printed or spin-coated onto the compact TiO₂ to give a dry film thickness between 200 nm and 2 μm, governed by the height of the doctor blade. These sheets were then slowly heated to 500° C. (ramped over 30 minutes) and baked at this temperature for 30 minutes under an oxygen flow. After cooling, the sheets were cut into slides of the required size and stored in the dark until further use.

Prior to fabrication of each set of devices, the nanoporous films were soaked in a 0.015 M aqueous solution of TiCl₄ for 1 hours at 70° C. This procedure was applied to grow a thin shell of TiO₂ upon the mesoporous TiO₂. Following the TiCl₄ treatment the films were rinsed with deionised water, dried in air, and baked once more at 500° C. for 45 minutes under air flow. Once cooled to 70° C. they were placed in a dye solution overnight.

5. Deposition of the Perovskite Precursor Solution and Formation of the Mesoporous Perovskite Semiconducting Electrode:

A small volume, between 20 to 100 μl of the solution of the perovskite precursor solution in DMF (methylammonium iodide lead (II) chloride (CH₃NH₃PbCl₂I)) at a volume concentration of between 5 to 40 vol % was dispensed onto each preprepared mesoporous electrode film and left for 20 s before spin-coating at 1500 rpm for 30 s in air. The coated films were then placed on a hot plate set at 100 degrees Celsius and left for 45 minutes at this temperature in air, prior to cooling. During the drying procedure at 100 degrees, the coated electrode changed colour from light yellow to dark brown, indicating the formation of the desired perovskite film with the semiconducting properties.

6. Hole-Transporter Deposition and Device Assembly:

The hole transporting material used was spiro-OMeTAD (Lumtec, Taiwan), which was dissolved in chlorobenzene at a typical concentration of 180 mg/ml. After fully dissolving the spiro-OMeTAD at 100° C. for 30 minutes the solution was cooled and tertbutyl pyridine (tBP) was added directly to the solution with a volume to mass ratio of 1:26 μl/mg tBP:spiro-MeOTAD. Lithium bis(trifluoromethylsulfonyl)amine salt (Li-TFSI) ionic dopant was pre-dissolved in acetonitrile at 170 mg/ml, then added to the hole-transporter solution at 1:12 μl/mg of Li-TFSI solution:spiro-MeOTAD. A small quantity (20 to 70 μl) of the spiro-OMeTAD solution was dispensed onto each perovskite coated mesoporous film and left for 20 s before spin-coating at 1500 rpm for 30 s in air. The films were then placed in a thermal evaporator where 200 nm thick silver electrodes were deposited through a shadow mask under high vacuum (10⁻⁶ mBar).

7. Fabrication of Devices Comprising FOPbI_(3z)Br_(3(1−z))

Devices were fabricated on fluorine-doped tin oxide coated glass substrates. These were cleaned sequentially in hallmanex, acetone, propan-2-ol and oxygen plasma. A compact layer of TiO₂ was deposited by spin-coating a mildly acidic solution of titanium isopropoxide in ethanol. This was dried at 150° C. for 10 minutes. The TiO₂ mesoporous layer was deposited by spin-coating at 2000 rpm a 1:7 dilution by weight of Dyesol 18NR-T paste in ethanol, forming a layer of ˜150 nm. The layers were then sintered in air at 500° C. for 30 minutes. Upon cooling, perovskite precursors were spin-coated at 2000 rpm in a nitrogen-filled glovebox, followed by annealing at 170° C. for 25 minutes in the nitrogen atmosphere. The hole-transport layer was deposited by spin-coating an 8 wt. % 2,2′,7,7′-tetrakis-(N,N-di-pmethoxyphenylamine)9,9′-spirobifluorene (spiro-OMeTAD) in chlorobenzene solution with added tert-butylpyridine (tBP) and lithium bis(trifluoromethanesulfonyl)imide (Li-TFSI). Devices were completed by evaporation of 60 nm Au contacts.

Experimental Results

In FIG. 1 a schematic illustration of a cross section of a solid-state perovskite sensitized solar cell is shown. Light is incident from the bottom side. The device comprises a flat film of fluorene doped tin oxide (FTO) coated upon a glass substrate. The FTO is the anode in the presented configuration. On top of the FTO a thin (˜50 nm thick) layer of compact TiO₂ functions as a hole-blocking and electron collection interlayer, which ensures selective collection of electrons at this anode. Upon the compact TiO₂, a mesoporous film of TiO₂ is coated, serves to function as a high surface area n-type anode. This mesoporous TiO₂ is coated with the perovskite material which functions as the sensitizer. The role of the sensitizer is to absorb sun light and transfer photoexcited electrons into the TiO₂ and transfer holes into the hole-transporter. The pores in the perovskite sensitized mesoporous TiO₂ film are predominantly filled with a hole-transporter. The role of the hole-transporter is to accept the photo-generated holes from the valance band of the perovskite sensitizer and transport these holes out of the device to the external circuit. The device is capped with a metal electrode to complete the solar cell. Further illustrations of the structure of the solar cells and the composition of the components are given in FIG. 3 and FIG. 4.

In FIG. 2 the UV-Vis absorption spectra are shown for the single halide perovskites. In FIG. 2a the lead bromide perovskite (CH₃NH₃PbBr₃). Is show, which appears yellow to the eye. In FIG. 2b the UV-Vis-NIR lead Iodide perovskite (CH₃NH₃PbI₃) is show which appears dark brown to the eye. The lead iodide perovskite has a very good absorption spectrum with respect to potential use in a solar cell. However, due to the material instability it does not work well when employed as a sensitizer in a solid-state perovskite sensitized solar cell.

In FIG. 5, the UV-Vis-NIR absorption spectra for mixed halide perovskites are shown. The lead iodide chloride perovskite (CH₃NH₃PbCl₂I) appears dark brown to the eye and is shown with the dark line, and the lead bromide chloride perovskite (CH₃NH₃PbCl₂Br) appears red to the eye and is shown with the light line. We term the CH₃NH₃PbCl₂I perovskite, K330 and CH₃NH₃PbCl₂Br, K331. The lead iodide chloride perovskite is particularly promising since it absorbs very strongly over the entire visible to near infrared region of the solar spectrum.

In order to first test the photovoltaic of the perovskite absorbers, flat layer solar cells were constructed. In FIG. 6, the current voltage curve for a flat layer K330 solar cells is show. The photocurrent of 3.5 mAcm⁻² is reasonably high for a flat layer sensitized solar cell.

A current voltage curve measured under AM1.5 simulated sun light of 100 mWcm⁻² irradiance for a complete solar cell as described and illustrated in FIG. 1 employing spiro-OMeTAD as the hole-transporter and CH₃NH₃PbCl₂I as the perovskite absorber, is shown in FIG. 7. The photocurrent is over 20 mAcm⁻² and the overall power conversion efficiency is 11.5%. This level of performance is exceptionally high for a solid-state sensitized solar cell and represents an absolute breakthrough in performance for this technology. In comparison, the highest reported efficiency for solid-state dye-sensitized solar cells is just over 7%, and the highest verified efficiency for liquid electrolyte dye-sensitized solar cells is 11.4%.

In FIG. 8, a current voltage curve measured under AM1.5 simulated sun light of 100 mWcm⁻² irradiance for a complete solar cell as described and illustrated in FIG. 1 employing P3HT as the hole-transporter and CH₃NH₃PbCl₂I as the perovskite absorber is shown. This device also performs well, although not as well as the device employing spiro-OMeTAD as the hole-transporter.

In FIG. 9 the external quantum efficiency (EQE) action spectrum is show for a K330 sensitized solar cell employing spiro-OMeTAD as the hole-transporter. The exceptionally high EQE of 80% at peak and broadly functioning over the entire absorbing range justifies the high photocurrent measured under simulated sun light.

In FIG. 10 the external quantum efficiency action spectrum is show for a K330 sensitized solar cell employing semiconducting polymers, P3HT and PCPDTBT as the hole-transporters. The EQE spectra has dips where the polymers absorb light, with the P3HT absorption maximum being between 500 to 600 nm, and the PCPDTBT absorption maximum being at 700 nm. These dips in the EQE spectrum, illustrate that the polymer is in fact absorbing light which would have otherwise been absorbed in the perovskite sensitizer. Once the light is absorbed in the polymer, it does not appear to generate charge very effectively. This “light filtering effect” justifies why the photocurrent is lower for the perovskite sensitized solar cell employing the polymer hole-conductor P3HT, than the small molecular wide band gap hole-conductor spiro-OMeTAD.

FIG. 11 shows the UV-Vis-NIR absorption spectra for the complete photoactive of a solar cell comprised of K330 and spiro-OMeTAD. The films are sealed in nitrogen. There is negligible change in the absorption spectra over 1000 hrs constant illumination from AM1.5 sun light at 100 mWcm⁻² irradiance. This indicates that the perovskite is stable in the photoactive layer of the solar cell.

FIG. 12 shows the optical density at 500 nm as a function of time under Am1.5 illumination, extracted from the data in FIG. 11.

The X-ray diffraction pattern, shown in FIG. 13 was extracted at room temperature from CH₃NH₃PbCl₂I thin film coated onto glass slide by using X′pert Pro X-ray Diffractometer.

FIG. 13 shows the typical X-ray diffraction pattern of the (Methylammonium Dichloromonoiodo plumbate(II); CH₃NH₃PbCl₂I film on glass substrate. X-ray diffraction pattern confirms the ABX₃ type of cubic (a=b=c=90) perovskite structure (Pm3m). CH₃NH₃PbCl₂I gave diffraction peaks at 14.20, 28.58, and 43.27°, assigned as the (100), (200), and (300) planes, respectively of a cubic perovskite structure with lattice parameter a) 8.835 Å, b) 8.835 and c) 11.24 Å. A sharp diffraction peaks at (h 0 0; where h=1-3) suggest that the films fabricated on glass substrate were predominantly single phase and were highly oriented with the a-axis self-assembly [“Organometal Halide Perovskites as Visible-Light Sensitizers for Photovoltaic Cells” Akihiro Kojima, Kenjiro Teshima, Yasuo Shirai and Tsutomu Miyasaka, J Am. Chem. Soc. 2009, 131, 6050].

CH₃NH₃ ⁺ cation cannot be assigned in the X ray given its dynamic orientation, CH₃NH₃ ⁺ is incompatible with the molecular symmetry, and hence the cation is still disordered in this phase at room temperature. And thus, the effective contribution of the C and N atoms to the total diffracted intensity is very small relative to the contributions from Pb and X (Cl and I) [“Alkylammonium lead halides. Part 2. CH ₃ NH ₃ PbX ₃ (X=Cl, Br, I) perovskites: cuboctahedral halide cages with isotropic cation reorientation”, Osvaldkn O P and Rodericke Wasylishenm et al. Can. J Chem. 1990, 68, 412.].

The peak positions for the synthesised mixed CH₃NH₃PbCl₂I at (h,0,0) were observed to be shifted towards lower 20 and were positioned in between the pure methylammonium trihalogen plumbate i.e. CH₃NH₃PbI₃ and CH₃NH₃PbCl₃ [“Dynamic disorder in methylammoniumtrihalogenoplumbates (II) observed by millimeter-wave spectroscopy“, A. Poglitsch and D. Weber, J Chem. Phys. 1987, 87, 6373.] respectively, and also the increased lattice parameter (a=8.835 Å) of the CH₃NH₃PbCl₂I film as compared to pure “Cl” based perovskite i.e. CH₃NH₃PbCl₃ (a=5.67 Å) with the addition of “I” content gives an evidence of the formation of mixed halide perovskite [“Optical properties of CH3NH3PbX3 (X=halogen) and their mixed-halide crystals”, N. Kitazawa, Y Watanabe and Y Nakamura, J. Mat Sci. 2002, 37, 3585.].

The diffraction pattern of the product contained a few unidentified peaks, they can attributed to the various factors including the presence of some impurity (e.g. Pb(OH)Cl, CH₃NH₃X; X=Cl and/or I, or a related compounds that may generate during the synthesis even if slightly excess of reactants are used, and also to the hygroscopic nature of the compound which can resultantly form unwanted impurity [“Alkylammonium lead halides. Part 2. CH ₃ NH ₃ PbX ₃ (X=Cl, Br, I) perovskites: cuboctahedral halide cages with isotropic cation reorientation”, Osvaldkn O P and Rodericke Wasylishenm et al. Can. J. Chem. 1990, 68, 412.] Additionally, “I” ion present in the lattice may split some of the peaks at room temperature given the fact that the pure “I” based perovskite (CH₃NH₃PbI₃) forms tetragonal structure [“Alkylammonium lead halides. Part 1. Isolated˜b 1 6 i˜on-s in (CH3NH3)4Pb16-2H2O” Beverly Vincent K, Robertsont, Stanlecya merona, N Dosvaldk, Can. J. Chem. 1987, 65, 1042; “Organometal Halide Perovskites as Visible-Light Sensitizers for Photovoltaic Cells” Akihiro Kojima, Kenjiro Teshima, Yasuo Shirai and Tsutomu Miyasaka, J. Am. Chem. Soc. 2009, 131, 6050].

In FIG. 14, a scanning electron microscopy (SEM) cross-sectional image of a mesoporous TiO₂ film coated upon an FTO electrode is shown. The perovskite precursor solution is coated within the porous TiO₂ film via spin-coating. To elaborate upon this coating process, there has been extensive previous work investigating how solution-cast materials infiltrate into mesoporous oxides (H. J. Snaith et al., Nanotechnology 19, 424003-424015(2008); T. Leijtens et al., ACS Nano 6, 1455-1462 (2012); J. Melas-Kyriazi et al., Adv. Energy. Mater. 1, 407-414 (2011); I-K. Ding et al., Adv. Funct. Mater. 19, 2431-2436 (2009); A. Abrusci et al., Energy Environ. Sci. 4, 3051-3058 (2011)). If the concentration of the solution is low enough, and the solubility of the cast material high enough, the material will completely penetrate the pores as the solvent evaporates. The usual result is that the material forms a “wetting” layer upon the internal surface of the mesoporous film, and uniformly, but not completely, fills the pores throughout the thickness of the electrode. The degree of “pore-filling” is controlled by varying the solution concentration. If the concentration of the casting solution is high, a “capping layer” will be formed on top of the mesoporous oxide in addition to a high degree of pore-filling. In FIG. 15, a cross-sectional SEM image of a mesoporous TiO₂ film coated with the perovskite absorber is shown. There is no appearance of a capping layer, which implies that the perovskite is predominantly within the mesoporous film. To complete the photoactive layer, the hole-transporter, spiro-OMeTAD, is spin-coated on top of the perovskite coated electrode. In FIG. 16 a cross-sectional SEM image of the complete photoactive film is shown, where it is now apparent that the spiro-OMeTAD has formed a capping layer.

FIGS. 17 to 19 relate to perovskites comprising a formamidinium cation and devices comprising FOPbI_(3y)Br_(3(1−y)). In general, it is considered to be advantageous to retain a 3D crystal structure in the perovskite, as opposed to creating layered perovskites which will inevitably have larger exciton binding energies (Journal of Luminescence 60&61 (1994) 269 274). It is also advantageous to be able to tune the band gap of the perovskite. The band gap can be changed by either changing the metal cations or halides, which directly influence both the electronic orbitals and the crystal structure. Alternatively, by changing the organic cation (for example from a methylammonium cation to a formamidinium cation), the crystal structure can be altered. However, in order to fit within the perovskite crystal, the following)=geometric condition must be met: (R_(A)+R_(X))=t√{square root over (2)}(R_(B)+R_(X)) wherein R_(A,B,&X) are the ionic radii of ABX ions. The inventor have unexpectedly found that formamidinium cation (FO) does indeed form the perovskite structure in a the cubic structure in a FOPbBr₃ or FOPbI₃ perovskite, and mixed halide perovskites thereof. 

1-87. (canceled)
 88. An optoelectronic device comprising a mixed-anion perovskite, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions.
 89. An optoelectronic device according to claim 88, wherein the mixed-anion perovskite comprises a first cation, a second cation, and said two or more different anions selected from halide anions.
 90. An optoelectronic device according to claim 89, wherein the second cation is a divalent metal cation.
 91. An optoelectronic device according to claim 90, wherein the second cation is selected from Sn²⁺ and Pb²⁺.
 92. An optoelectronic device according to claim 89, wherein the first cation is an organic cation.
 93. An optoelectronic device according to claim 92, wherein the organic cation is any of: an organic cation having the formula (R₁R₂R₃R₄N)⁺, wherein R₁ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; R₂ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; R₃ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; and R₄ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; and an organic cation having the formula (R₅R₆N═CH—NR₇R₈)⁺, wherein R₅ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; R₆ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; R₇ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; and R₈ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; and preferably has the formula (H₂N═CH—NH₂)⁺.
 94. An optoelectronic device according to claim 93, wherein the organic cation is an organic cation having the formula (R₅NH₃)⁺, wherein R₅ is hydrogen, or unsubstituted or substituted C₁-C₂₀ alkyl.
 95. An optoelectronic device according to claim 88, wherein the mixed-anion perovskite has the formula [A][B][X]₃ wherein [A] is at least one cation, [B] is at least one cation, and [X] is two or more different halide anions, wherein one of the two or more different halide anions is iodide.
 96. An optoelectronic device according to claim 88, wherein the perovskite is a perovskite compound of the formula (I): [A][B][X]₃  (I) wherein: [A] is at least one organic cation; [B] is at least one metal cation; and [X] is said two or more different anions selected from halide anions.
 97. An optoelectronic device according to claim 88, wherein the perovskite is a mixed-halide perovskite of the formula (Ia) [A][B][X]₃  (Ia) wherein: [A] is at least one cation, comprising at least one organic cation of the formula (R₅R₆N═CH—NR₇R₈)⁺, wherein: (i) R₅ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; (ii) R₆ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; (iii) R₇ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; and (iv) R₈ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; [B] is at least one divalent metal cation; and [X] is two or more different halide anions.
 98. An optoelectronic device according to claim 88, wherein the perovskite is a perovskite compound of formula (IIa): ABX_(3z)X′_(3(1−z))  (IIa) wherein: A is an organic cation of the formula (R₅R₆N═CH—NR₇R₈)⁺, wherein: R₅, R₆, R₇ and R₈ are independently selected from hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, and unsubstituted or substituted aryl; B is a metal cation; X is a first halide anion; X′ is a second halide anion which is different from the first halide anion; and z is greater than 0 and less than
 1. 99. An optoelectronic device according to claim 98, wherein z is from 0.05 to 0.95.
 100. An optoelectronic device according to claim 88, wherein the perovskite is selected from CH₃NH₃PbBrI₂, CH₃NH₃PbBrCl₂, CH₃NH₃PbIBr₂, CH₃NH₃PbICl₂, CH₃NH₃PbClBr₂, CH₃NH₃PbI₂Cl, CH₃NH₃SnBrI₂, CH₃NH₃SnBrCl₂, CH₃NH₃SnF₂Br, CH₃NH₃SnIBr₂, CH₃NH₃SnICl₂, CH₃NH₃SnF₂I, CH₃NH₃SnClBr₂, CH₃NH₃SnI₂C₁ and CH₃NH₃SnF₂Cl.
 101. An optoelectronic device according to claim 98, wherein the perovskite has the formula (H₂N═CH—NH₂)PbI_(3z)Br_(3(1−z)).
 102. An optoelectronic device according to claim 88, wherein said optoelectronic device is an optoelectronic device selected from: a light-emitting device; a photodiode; a photomultiplier; a photo resistor; a photo detector; solid-state triode; a battery electrode; a transistor; and a laser.
 103. An optoelectronic device according to claim 102, wherein said optoelectronic device is selected from: a light-emitting diode; a phototransistor; a light-sensitive detector; and a diode injection laser.
 104. An optoelectronic device according to claim 102, wherein said optoelectronic device is a light-emitting device.
 105. An optoelectronic device according to claim 104, wherein said optoelectronic device is a light-emitting diode.
 106. An optoelectronic device comprising a perovskite of the formula (I) [A][B][X]₃  (I) wherein: [A] is at least one cation, comprising at least one organic cation of the formula (R₅R₆N═CH—NR₇R₈)⁺, wherein: (i) R₅ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; (ii) R₆ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; (iii) R₇ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; and (iv) R₈ is hydrogen, unsubstituted or substituted C₁-C₂₀ alkyl, or unsubstituted or substituted aryl; [B] is at least one divalent metal cation, wherein [B] comprises Pb²⁺; and [X] is iodide.
 107. An optoelectronic device according to claim 106, wherein the optoelectronic device is a light-emitting device. 